TITLE

High efficiency indium tin oxide/indium phosphide solar cells

AUTHOR(S)
Coutts, T. J.; Naseem, S.
PUB. DATE
January 1985
SOURCE
Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p164
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Solar cells have been fabricated by rf sputter depositing indium tin oxide onto single crystal p-type indium phosphide. Four different substrate doping densities have been used but in all cases the dopant was zinc and the wafers were <100> oriented. The optimum doping density from the range studied was 3×1016 cm-3 and devices based on such substrates have yielded total area efficiencies up to 16.2% using the air mass 1.5 spectrum normalized to 100 mW cm-2, which correspond to active area efficiencies of 19.1%. A doping density less than the optimum yielded devices with excessive series resistance. Higher doping densities led to a marked loss of red response.
ACCESSION #
9817048

 

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