Improvement of optical characteristics of Al0.48In0.52As grown by molecular beam epitaxy

Welch, D. F.; Wicks, G. W.; Eastman, L. F.; Parayanthal, P.; Pollak, F. H.
January 1985
Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p169
Academic Journal
The photoluminescence linewidth (4 K) of Al0.48In0.52As was reduced to 15 meV and its dependence was determined to be a strong function of the substrate temperature and As4 overpressure. Raman spectroscopy correlates the luminescence broadening to the crystallinity of the AlInAs. The ratio of the allowed longitudinal optical phonon to forbidden transverse optical phonon Raman peak heights is 10:1.


Related Articles

  • Electrical properties and band offsets of InAs/AlSb n-N isotype heterojunctions grown on GaAs. Nakagawa, Atsushi; Kroemer, Herbert; English, John H. // Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1893 

    The MBE growth and selected properties of InAs/AlSb n-N isotype heterojunctions on n+-GaAs substrates are described. Because of a large conduction-band offset (1.35 eV), these junctions behave like Schottky barriers, with excellent rectification characteristics, despite the presence of a very...

  • Molecular-beam-epitaxial growth and optical analysis of InAs/AlSb strained-layer superlattices. Yano, Mitsuaki; Okuizumi, Masaru; Iwai, Yoshio; Inoue, Masataka // Journal of Applied Physics;12/15/1993, Vol. 74 Issue 12, p7472 

    Presents information on a study which described structural and optical properties of indium arsenide-aluminum antimonide strained layer superlattices grown by molecular-beam epitaxy. Methods; Results; Discussion.

  • Low-frequency noise measurements of AlxGa1-xAs/InyGa1-y As/GaAs high electron mobility transistors. Haddab, Y.; Deveaud, B.; Bühlmann, H.-J.; Ilegems, M. // Journal of Applied Physics;8/15/1995, Vol. 78 Issue 4, p2509 

    Provides information on low-frequency noise measurements of pseudomorphic aluminum-gallium (Ga)-arsenic (As)/indium-Ga-As high electron mobility transistors grown by molecular beam epitaxy. Calculation of the wave function of the electrons in the heterostructures; Overview of the low-frequency...

  • Influence of thin protective InAs layers on the optical quality of AlGaAs and quantum wells. Tsai, K. L.; Chang, K. H.; Lee, C. P.; Huang, K. F.; Chang, Y.; Fan, J. C.; Liu, D. G. // Journal of Applied Physics;9/15/1992, Vol. 72 Issue 6, p2449 

    Presents a study that examined the influence of a thin protective but subsequently evaporated indium-arsenic layer on the regrowth of aluminum-gallium-arsenic (AlGaAs). Importance of molecular beam epitaxy; Information on photoluminescence (PL) spectrum; Discussion on the measured PL spectra of...

  • Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy. Lin, S. D.; Lin, Z. C.; Lee, C. P. // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p054312 

    Self-assembled GaAs nanostructures in In0.53Ga0.47As matrix on (100) InP substrate have been investigated using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). In measured AFM images, dotlike and wirelike GaAs nanostructures were obtained with different...

  • Single and Coupled Microcavities — AlAs/GaAs DBR Pillars and GaAs Pyramids. Karl, M.; Löffler, W.; Lupaca-Schomber, J.; Passow, T.; Li, S.; Hawecker, J.; Pérez-Willard, F.; Gerthsen, D.; Kalt, H.; Klingshirn, C.; Hetterich, M. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p1133 

    We discuss two different types of GaAs-based microcavities: Single and coupled pillar-type resonators with AlAs/GaAs distributed Bragg reflectors (DBRs) were fabricated by means of molecular-beam epitaxy (MBE) and focussed-ion-beam (FIB) milling. The dependence of the observed cavity modes on...

  • High power (>1 W) room-temperature (300 K) 980 nm continuous-wave AlGaAs/InGaAs/GaAs semiconductor lasers. Kosiel, Kamil; Muszalski, Jan; Szerling, Anna; Bugajski, Maciej // Optica Applicata;2007, Vol. 37 Issue 4, p423 

    A technology of high power, continuous-wave (CW) semiconductor lasers has been elaborated. AlGaAs/InGaAs/GaAs heterostructures, grown by molecular beam epitaxy (MBE), were used to fabricate laser diodes. The active region of laser diode was formed as strained, 8 nm thick, quantum well (QW)...

  • Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBE. Chen, Wei-Chun; Wu, Yue-Han; Peng, Chun-Yen; Hsiao, Chien-Nan; Chang, Li // Nanoscale Research Letters;Dec2014, Vol. 9 Issue 1, p1 

    InAlN films were deposited on Si(100) substrate using metal-organic molecular beam epitaxy. We investigated the effect of the trimethylindium/trimethylaluminum (TMIn/TMAl) flow ratios on the structural, morphological, and optical properties of InAlN films. Surface morphologies and microstructure...

  • Mobility enhancement in strained p-InGaSb quantum wells. Bennett, Brian R.; Ancona, Mario G.; Boos, J. Brad; Shanabrook, Benjamin V. // Applied Physics Letters;7/23/2007, Vol. 91 Issue 4, p042104 

    Quantum wells of InGaSb clad by AlGaSb were grown by molecular beam epitaxy. The InGaSb is in compressive strain, resulting in a splitting of the heavy- and light-hole valence bands and an enhancement of the mobility. The mobility was found to increase with increasing InSb mole fraction for...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics