Transmission electron microscopy of hydrogenated amorphous semiconductor superlattices

Deckman, H. W.; Dunsmuir, J. H.; Abeles, B.
January 1985
Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p171
Academic Journal
Transmission electron microscopy (TEM) of amorphous semiconductor superlattices grown by plasma assisted chemical vapor deposition demonstrates that sequential layers can be deposited without cumulative roughening and with atomically abrupt interfaces. Absence of cumulative roughening effects allows layers to be grown flat and smooth to within 5 Å on a∼100-Å lateral scale length, even after deposition of several hundred layers. In highly localized regions unusual defect structures appear as bifurcations of individual layers. The TEM sections used to investigate amorphous superlattice structure were prepared by a novel microfabrication technique.


Related Articles

  • Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy. Yoshihiro Sugawara; Yukari Ishikawa; Arata Watanabe; Makoto Miyoshi; Takashi Egawa // AIP Advances;2016, Vol. 6 Issue 4, p1 

    The behavior of dislocations in a GaN layer grown on a 4-inch Si(111) substrate with an AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor deposition was observed by transmission electron microscopy. Cross-sectional observation indicated that a drastic decrease...

  • V-shaped defects connected to inversion domains in AlGaN layers. Pécz, B.; Makkai, Zs.; di Forte-Poisson, M. A.; Huet, F.; Dunin-Borkowski, R. E. // Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1529 

    Thick AlGaN layers and AlGaN/GaN superlattices have been grown on GaN using metalorganic chemical vapor deposition. Cross-sectional transmission electron microscopy has been used to show that V-shaped surface pits on these samples differ from similar features observed in the InGaN system....

  • Optical and structural characterization of InAs/GaSb superlattices. Su, Y. K.; Lin, C. L.; Chen, S. M.; Chang, J. R.; Jaw, D. H. // Journal of Applied Physics;6/1/1997, Vol. 81 Issue 11, p7529 

    InAs/GaSb superlattices sandwiched between conventional InAs layers were grown by low pressure metal organic chemical vapor deposition. Period and roughness of the superlattices were examined by field emission transmission electron microscopy. Room temperature infrared absorption spectra for...

  • Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices. Lloret, F.; Fiori, A.; Araujo, D.; Eon, D.; Villar, M. P.; Bustarret, E. // Applied Physics Letters;5/2/2016, Vol. 108 Issue 18, p181901-1 

    The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping...

  • III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers. Rajeev, Ayushi; Shi, Bei; Li, Qiang; Kirch, Jeremy D.; Cheng, Micah; Tan, Aaron; Kim, Honghyuk; Oresick, Kevin; Sigler, Chris; Lau, Kei M.; Kuech, Thomas F.; Mawst, Luke J. // Physica Status Solidi. A: Applications & Materials Science;Jan2019, Vol. 216 Issue 1, pN.PAG 

    Metalorganic chemical vapor deposition (MOCVD) growth of InP‐based quantum cascade laser (QCL) structures on a Si (001) substrate is demonstrated by employing a metamorphic InP buffer layer with InAs/InP quantum dots as dislocation filters. Calibration samples consist of a...

  • Structural and optical characterization of type-II InAs/InAs1-xSbx superlattices grown by metalorganic chemical vapor deposition. Steenbergen, E. H.; Huang, Y.; Ryou, J.-H.; Ouyang, L.; Li, J.-J.; Smith, D. J.; Dupuis, R. D.; Zhang, Y.-H. // Applied Physics Letters;8/15/2011, Vol. 99 Issue 7, p071111 

    Strain-balanced type-II InAs/InAs1-xSbx superlattices with various compositions (x = 0.22, 0.23, 0.37) and different layer thicknesses (tInAs = 7 nm, tInAsSb = 3.3, 2.3, 2.0 nm, respectively) have been grown by metalorganic chemical vapor deposition on GaSb substrates. X-ray diffraction revealed...

  • α-SiC–β-SiC heteropolytype structures on Si (111). Morales, F. M.; Förster, Ch.; Ambacher, O.; Pezoldt, J. // Applied Physics Letters;11/14/2005, Vol. 87 Issue 20, p201910 

    Nanoscale α-SiC(0001) on β-SiC(111) heterostructures on Si (111) substrates fabricated by ultralow-pressure chemical vapor deposition are demonstrated. The intentional formation of the α-β structure was achieved by adjusting the SiH4 to C2H4 flux ratios to carbon rich conditions and...

  • GeTe sequences in superlattice phase change memories and their electrical characteristics. Ohyanagi, T.; Kitamura, M.; Araidai, M.; Kato, S.; Takaura, N.; Shiraishi, K. // Applied Physics Letters;6/23/2014, Vol. 104 Issue 25, p1 

    We studied GeTe structures in superlattice phase change memories (superlattice PCMs) with a [GeTe/Sb2Te3] stacked structure by X-ray diffraction (XRD) analysis. We examined the electrical characteristics of superlattice PCMs with films deposited at different temperatures. It was found that XRD...

  • Comparison of catalytically grown and arc-discharge carbon nanotube tips. Thie⁁n-Nga, Le⁁; Bonard, Jean-Marc; Ga´al, Richard; Forro´, La´szlo´; Hernadi, Klara // Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p850 

    We have performed a detailed transmission electron microscopy study of the tip of carbon nanotubes prepared by chemical vapor deposition (CVD) and by arc discharge. We found that a large proportion of the CVD-grown tubes have well-formed caps but that the graphitization of the walls is far from...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics