TITLE

Transmission electron microscopy of hydrogenated amorphous semiconductor superlattices

AUTHOR(S)
Deckman, H. W.; Dunsmuir, J. H.; Abeles, B.
PUB. DATE
January 1985
SOURCE
Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p171
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Transmission electron microscopy (TEM) of amorphous semiconductor superlattices grown by plasma assisted chemical vapor deposition demonstrates that sequential layers can be deposited without cumulative roughening and with atomically abrupt interfaces. Absence of cumulative roughening effects allows layers to be grown flat and smooth to within 5 Å on a∼100-Å lateral scale length, even after deposition of several hundred layers. In highly localized regions unusual defect structures appear as bifurcations of individual layers. The TEM sections used to investigate amorphous superlattice structure were prepared by a novel microfabrication technique.
ACCESSION #
9817044

 

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