TITLE

Structure imaging of commensurate GexSi1-x/Si(100) interfaces and superlattices

AUTHOR(S)
Hull, R.; Gibson, J. M.; Bean, J. C.
PUB. DATE
January 1985
SOURCE
Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p179
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High resolution electron microscopy is used to study interfacial quality in commensurate GexSi1-x systems grown by molecular beam epitaxy. Structure images of interfaces have been obtained, yielding atomic-scale information about sharpness and smoothness. From careful consideration of image contrast mechanisms at the interface, it is shown that variations in germanium concentration as low as about 5% may be detected under optimum conditions. Single interfaces of GexSi1-x exhibit no detectable diffusion of germanium into the silicon substrate and are locally sharp, but are not constrained to a single atomic plane. Interfacial quality is retained in a commensurate twenty-period 75-Ã… Ge0.4Si0.6/250-Ã… Si(100) superlattice. The techniques described here are also applicable to other compositional phase boundaries such as in III-V heterostructures.
ACCESSION #
9817042

 

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