TITLE

Laser-enhanced plasma etching of silicon

AUTHOR(S)
Holber, W.; Reksten, G.; Osgood, R. M.
PUB. DATE
January 1985
SOURCE
Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p201
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Laser-enhanced etching of Si in a CF4/O2 plasma is described. Both p-type and n-type Si were investigated for different dopant concentrations, at laser intensities from 0–2 W. Etch–rate enhancement, due to thermal and nonthermal effects, was observed.
ACCESSION #
9817035

 

Related Articles

  • Maskless etching of silicon using patterned microdischarges. Sankaran, R. M.; Giapis, K. P. // Applied Physics Letters;7/30/2001, Vol. 79 Issue 5 

    Microdischarges in flexible copper-polyimide structures with hole diameters of 200 μm have been used as stencil masks to pattern bare silicon in CF[sub 4]/Ar chemistry. The discharges were operated at 20 Torr using the substrate as the cathode, achieving etch rates greater than 7...

  • Metallic contamination in silicon during plasma resist stripping: A deep level transient spectroscopy study. Joubert, O.; Mathiot, D.; Pelletier, J. // Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2241 

    Deep level transient spectroscopy is shown to be an easy way to investigate the defects induced in the silicon substrate during photoresist plasma etching. In this study it has been possible to discriminate between the contamination induced by the reactor environment and the contamination due to...

  • Large fluorocarbon ions can contribute to film growth during plasma etching of silicon. Fuoco, Erick R.; Hanley, Luke // Journal of Applied Physics;7/1/2002, Vol. 92 Issue 1, p37 

    The preferential etching of SiO[sub 2] over Si in fluorocarbon plasmas occurs in part through the growth of a fluorocarbon layer. Large C[sub χ]F[sup +,0,sub y] (χ> 1) ions and radicals have been observed in etching fluorocarbon plasmas, but their role in the etching processes has not...

  • A three-dimensional model for inductively coupled plasma etching reactors: Azimuthal symmetry, coil properties, and comparison to experiments. Kushner, Mark J.; Collison, Wenli Z.; Grapperhaus, Michael J.; Holland, John P.; Barnes, Michael S. // Journal of Applied Physics;8/1/1996, Vol. 80 Issue 3, p1337 

    Presents a study which described a computer model for an inductively coupled plasma etching reactor to investigate asymmetries. Comparison between computed and experimentally measured ion densities and poly-silicon etch rates; Influence of the electrical transmission line properties of the coil...

  • Thermal stability of dry etch damage in SiC. Pearton, S.J.; Lee, J.W. // Applied Physics Letters;5/20/1996, Vol. 68 Issue 21, p2987 

    Assesses the introduction of dry etch damage into n-type silicon carbide. Monitor of the sheet resistance after exposure to argon plasmas; Determination of radio frequency powers for measurable resistance changes; Occurrence of a major annealing stage.

  • Spontaneous production of 10-nm Si structures by plasma etching using self-formed masks. Tada, Tetsuya; Hamoudi, Ali // Applied Physics Letters;5/12/1997, Vol. 70 Issue 19, p2538 

    Analyzes the production of silicon nanostructures by plasma etching using self-formed masks. Conditions required for the production of nanostructures; Details of the condensation mechanism; Factors determining the pillar diameter.

  • Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron... Matsuura, Takashi; Honda, Yasuhiko; Murota, Junichi // Applied Physics Letters;6/6/1999, Vol. 74 Issue 23, p3573 

    Studies atomic-order layer-by-layer etching of silicon nitride using an ultraclean electron-cyclotron-resonance plasma. Surface nitrogen atoms in silicon nitride found to be removed selectively by excited hydrogen gas under well-controlled conditions; Removal of outermost silicon atoms by...

  • Selective dry etching of silicon with respect to germanium. Oehrlein, G. S.; Bestwick, T. D.; Jones, P. L.; Corbett, J. W. // Applied Physics Letters;4/9/1990, Vol. 56 Issue 15, p1436 

    We describe a plasma-based dry etching procedure which permits selective etching of Si over Ge with a Si/Ge etch rate ratio of over 70 and negligible etching of the Ge underlayer. This is achieved in a SF6/H2/CF4 gas mixture by the formation of a thin ([bar_over_tilde:_approx._equal_to]3 nm)...

  • Material-enhanced spatially dependent etch rate of SiO2 in CF4 reactive ion etching. Porkolab, G. A.; Wolf, E. D. // Applied Physics Letters;6/4/1990, Vol. 56 Issue 23, p2319 

    We report on the spatially dependent enhanced etch rate of SiO2 in a CF4 planar reactive ion etcher due to the presence of the compounds GaAs or InP, or the single elements Ti, V, Nb, Ta, Cr, Mo, W, Ni, Pd, Pt, Cu, Ag, Au, Al, Ga, In, or Ge. The etch rate enhancement is maximum immediately...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics