Laser-enhanced plasma etching of silicon

Holber, W.; Reksten, G.; Osgood, R. M.
January 1985
Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p201
Academic Journal
Laser-enhanced etching of Si in a CF4/O2 plasma is described. Both p-type and n-type Si were investigated for different dopant concentrations, at laser intensities from 0–2 W. Etch–rate enhancement, due to thermal and nonthermal effects, was observed.


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