TITLE

Sequential observation of electromigration degradation in passivated Al stripes by interferometric optical scanning

AUTHOR(S)
Fortini, A.; Bosmans, R.; Hamel, J.
PUB. DATE
January 1985
SOURCE
Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p150
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It is shown that geometrical damages resulting from electrotransport in passivated Al stripes can easily be observed, with a resolution of a few nanometers, by means of an interferometric optical set allowing for sequential recordings in processing.
ACCESSION #
9817024

 

Related Articles

  • Electromigration in isolated aluminum vias probed by resistance changes and 1/f noise. Alers, G. B.; Beverly, N. L.; Oates, A. S. // Journal of Applied Physics;5/15/1996, Vol. 79 Issue 10, p7596 

    Presents a study that performed 1/f noise and high-resolution resistance measurements in isolated aluminum via interconnects under electromigration stress. Experiment conducted; Results; Discussion.

  • Effects of aluminum microstructure on electromigration using a new reactive ion etching and... Wu, Ken; Baerg, William // Applied Physics Letters;3/25/1991, Vol. 58 Issue 12, p1299 

    Studies the effects of aluminum microstructure on electromigration. Use of a reactive ion etching and scanning electron microscopy technique; Determination of the median-time-to-fail of the electromigration distribution; Calculation of grain size distribution.

  • Influence of anisotropic surface diffusivity on electromigration induced void migration and... Fridline, D.R.; Bower, A.F. // Journal of Applied Physics;3/15/1999, Vol. 85 Issue 6, p3168 

    Provides information on the effects of void migration and evolution in an idealized interconnect due to electromigration induced surface diffusion. Theoretical framework of the study; Numerical procedure; Typical properties for aluminum interconnects from Frost and Ashby.

  • Electromigration induced resistance changes in a single aluminum via. Alers, G.B.; Oates, A.S. // Applied Physics Letters;6/26/1995, Vol. 66 Issue 26, p3600 

    Investigates the electromigration induced resistance changes in a single aluminum. Role of the titanium nitride layer as a diffusion barrier for the electromigration process; Measurement of resistance changes; Effect of direct current on the resistance.

  • The effect of Al[sub 3]Ti capping layers on electromigration in single-crystal aluminum interconnects. Srikar, V. T.; Thompson, C. V. // Applied Physics Letters;5/25/1998, Vol. 72 Issue 21 

    Studies of accelerated electromigration were conducted on passivated Al single-crystal interconnects fabricated on oxidized Si, and capped with Al[sub 3]Ti overlayers. The capping layers were formed by the reaction of the single-crystal Al films with Ti overlayers. The activation energy for...

  • Application of the Avrami rate equation to electromigration damage in Al–1%Si interconnections. Patrinos, A. J.; Vankar, V. D.; Schwarz, J. A. // Journal of Applied Physics;6/15/1988, Vol. 63 Issue 12, p5733 

    Focuses on a study which analyzed the electromigration failures in aluminum and aluminum-alloy using the Avrami rate expression. Details of the methodology; Discussion on findings; Implications of the study.

  • Electromigration in Al/SiO2 films prepared by a partially ionized beam deposition technique. Li, P.; Yapsir, A. S.; Rajan, K.; Lu, T.-M. // Applied Physics Letters;6/12/1989, Vol. 54 Issue 24, p2443 

    It has been found that the electromigration resistance of pure Al/SiO2 thin films prepared by the partially ionized beam (PIB) deposition technique can be improved significantly as compared to those deposited by the conventional means. The PIB contained 0.8–1.2% of Al self-ions and a bias...

  • Electromigration failure due to interfacial diffusion in fine Al alloy lines. Hu, C.-K.; Small, M.B.; Rodbell, K.P.; Stanis, C.; Blauner, P.; Ho, P.S. // Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p1023 

    Examines the electromigration failure in fine aluminum alloy lines. Comparison between the interfacial mass transport along the edge of alloy lines and grain boundaries; Demonstration of the failure mechanism with bamboo grain structures.

  • Comparison of Al electromigration in conventional Al alloy and W-plug contacts to silicon. Oates, A.S.; Martin, E.P.; Alugbin, D.; Nkansah, F. // Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3273 

    Compares the aluminum (Al) electromigration in conventional Al alloy and W-plug contacts to silicon. Determination of rate resistance by the underlayer material sheet resistance; Role of material interface in identifying contact reliability; Regulation of Al layer removal from the contact.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics