Solidification kinetics of pulsed laser melted silicon based on thermodynamic considerations

Galvin, G. J.; Mayer, J. W.; Peercy, P. S.
April 1985
Applied Physics Letters;4/1/1985, Vol. 46 Issue 7, p644
Academic Journal
The measured solidification velocities in silicon after pulsed laser melting are analyzed in terms of thermodynamic and kinetic considerations. Both interface and thermal transport limited growth regimes are observed. From the observed kinetics in the 1–6-m/s regime, the undercooling at the liquid-solid interface can be calculated. At velocities ≤6 m/s the undercooling increases with interface velocity at the rate of 15±5 deg/m/s.


Related Articles

  • Surface solidification and impurity segregation in amorphous silicon. Peercy, P. S.; Poate, J. M.; Thompson, Michael O.; Tsao, J. Y. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1651 

    Real-time measurements of the melt and solidification dynamics during pulsed laser irradiation have permitted elucidation of the processes which lead to the formation of very thin (∼2 nm) buried impurity layers in amorphous silicon. These novel structures are found to result from...

  • Solute trapping of group III, IV, and V elements in silicon by an aperiodic stepwise growth mechanism. Reitano, Riccardo; Smith, Patrick M.; Aziz, Michael J. // Journal of Applied Physics;8/1/1994, Vol. 76 Issue 3, p1518 

    Focuses on a study which measured the dependence on interface orientation of the amount of solute trapping of several group III, IV, and V elements in silicon, with rapid solidification following pulsed laser melting. Description of solidification phenomena; Methodology of the study; Results...

  • Numerical analysis of excimer-laser-induced melting and solidification of thin Si films. Gupta, Vikas V.; Jin Song, H.; Im, James S. // Applied Physics Letters;7/7/1997, Vol. 71 Issue 1, p99 

    Presents the numerical analysis of excimer-laser-induced melting and solidification of thin silicon films. Implementation of a variable node scheme to reduce total computation time; Types of solidification behavior depending on the incident beam energy density; Description of the solid-liquid...

  • Pulse-parameter dependence of the configuration characteristics of a micro-structure in fused SiO[sub 2] induced by femtosecond laser pulses. Luo, L.; Li, C.; Wang, D.; Yang, H.; Jiang, H.; Gong, Q. // Applied Physics A: Materials Science & Processing;2002, Vol. 74 Issue 4, p497 

    The fabrication of a micro-structures in fused SiO[sub 2] by femtosecond laser pulses was studied in the range of pulse duration 150∼500 fs, pulse energy 60 nJ to ∼7 μJ and wavelengths 400 nm and 800 nm. The characteristics of the cross section of the micro-structure were explained...

  • Controlled CO2 laser melting of silicon. Sheik-bahae, M.; Kwok, H. S. // Journal of Applied Physics;1/15/1988, Vol. 63 Issue 2, p518 

    Studies the application of carbon dioxide laser on controlled melting of doped silicon surfaces. Research on the application of carbon dioxide lasers to induce heating and melting; Physical processes in the interaction of the laser beam with a large bandgap semiconductor such as silicon;...

  • Shallow melting of thin heavily doped silicon layers by pulsed CO2 laser irradiation. James, R. B.; Christie, W. H. // Journal of Applied Physics;5/1/1989, Vol. 65 Issue 9, p3655 

    Presents information on a study which demonstrated the shallow melting of thin heavily doped silicon layers by pulsed carbon dioxide laser irradiation.

  • Growth dynamics of GeSi single crystals obtained by directional constitutional supercooling of the melt. Azhdarov, G.; Zeynalov, Z.; Agamaliyev, Z.; Mamedova, S. // Crystallography Reports;May2011, Vol. 56 Issue 3, p531 

    The problem of growth dynamics for crystals of binary solid solutions, obtained by the constitutional supercooling of the melt with a silicon feeding rod, has been solved within the Pfann approximation. The dependences of the change in the axial growth rate of GeSi crystals (0 ≤ x ≤...

  • Melting and superheating in solids with volume shrinkage at melting: A molecular dynamics study of silicon. Zhang, Qi; Li, Qikai; Li, Mo // Journal of Chemical Physics;1/28/2013, Vol. 138 Issue 4, p044504 

    The thermodynamics of homogeneous melting in superheated crystalline solids with volume shrinkage at melting is investigated using extensive molecular dynamics simulation in conjunction with a classical nucleation theory. A liquid-solid co-existing model is established to overcome the difficult...

  • Controlling Your Aluminum Melt.  // Modern Casting;Sep2006, Vol. 96 Issue 9, p48 

    The article offers a guide to controlling aluminum melt. During the process of solidification, aluminum grains grow into dendrites with multiple arms, like the branches of a tree. Grain refining adds nucleating sites into the melt to initiate grain growth. The primary method of silicon...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics