TITLE

UV laser-generated fluorine atom etching of polycrystalline Si, Mo, and Ti

AUTHOR(S)
Loper, G. L.; Tabat, M. D.
PUB. DATE
April 1985
SOURCE
Applied Physics Letters;4/1/1985, Vol. 46 Issue 7, p654
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fluorine atoms, generated by the 193-nm ArF laser photolysis of carbonyl difluoride, have been shown to be capable of efficiently and selectively etching polycrystalline silicon deposited on silicon dioxide. The highly specific and rapid removal of either molybdenum or titanium deposited on silicon dioxide has been demonstrated with fluorine atoms produced by the ArF laser photolysis of nitrogen trifluoride.
ACCESSION #
9817007

 

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