Direct molybdenum contacts to silicon

Cohen, S. S.; Kim, M. J.; Brown, D. M.; Gildenblat, G.
April 1985
Applied Physics Letters;4/1/1985, Vol. 46 Issue 7, p657
Academic Journal
Stringent requirements on the electrical and metallurgical properties of metallization systems for use in advanced, very large scale integrated circuits have created the need to study new metal-silicon systems. We have conducted a study of the Mo/Si direct contact system. The choice of molybdenum stems from its desirable electrical and metallurgical properties. To date, however, its contact properties to silicon were not examined in detail. Results of the present study show that Mo can result in low resistivities (<5 Ω μm2) for both contacts to heavily doped p+-Si and n+-Si, provided appropriate care is taken in opening the contact windows. Further, we found the Mo/Si contact system to be stable under extended heat treatments at temperatures of up to 650 °C.


Related Articles

  • The Influence of Reduction Process on the Iron-Molybdenum Nanoparticles in Modified MCM-41 Silica. SUROWIEC, Z.; WIERTEL, M.; GAC, W.; BUDZY«SKI, M. // Acta Physica Polonica, A.;Mar2014, Vol. 125 Issue 3, p846 

    Iron-molybdenum silica mesoporous materials were obtained by the application of direct hydrothermal method. The influence of high temperature samples reduction in the H2 flow on their structural and magnetic properties was studied. Four samples with different metal contents relative to silica...

  • Heat-treatment-induced defects in low-resistivity silicon. Dannefaer, S.; Puff, W.; Mascher, P.; Kerr, D. // Journal of Applied Physics;10/15/1989, Vol. 66 Issue 8, p3526 

    Presents a study which investigated heat-treatment-induced defects in Czochralski-grown silicon. Details on the experiment; Results of the study; Conclusion.

  • Effect of heat treatment on redistribution of hydrogen in directionally cast polycrystalline silicon. Kumar, Rajesh; Kotnala, R. K.; Arora, N. K.; Das, B. K. // Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1670 

    The effect of heat treatment on the minority-carrier surface recombination velocity in hydrogen-passivated polycrystalline silicon samples has been studied in the temperature range 350–500 °C using the electron-beam-induced current mode of a scanning electron microscope....

  • Influence of heat treatment and exposure to laser radiation on a vanadium-silicon composite. Chaplanov, A. M.; Shibko, A. N. // Technical Physics;Jun97, Vol. 42 Issue 6, p672 

    The influence of exposure to weak laser radiation during heat treatment on a vanadium-silicon composite is investigated. It is found that the changes in the phase composition of the contact cause changes in its electrophysical parameters. Application of a combined treatment permits the formation...

  • Influence of high-temperature thermal treatment on edge-defined film-fed growth silicon. Pivac, B.; Desnica, U. V. // Journal of Applied Physics;6/15/1989, Vol. 65 Issue 12, p4759 

    Presents a study which examined the influence of high-temperature thermal treatment on edge-defined film-fed growth silicon. Details of the experiment; Results; Discussion; Conclusion.

  • Inducing rapid epitaxy of polycrystalline silicon films deposited on <100> silicon by arsenic ion implantation. Komem, Y.; Wong, C. Y.; Harrison, H. B. // Journal of Applied Physics;7/1/1987, Vol. 62 Issue 1, p131 

    Presents information on evidence of an enhanced epitaxy occurring in the polycrystalline silicon film after arsenic ion implantation. Distribution of arsenic atoms throughout the film; Way to enhance the rate of epitaxial formation; Heat treatments in a nitrogen-rich environment.

  • Hydrogen blister depth in boron and hydrogen coimplanted n-type silicon. Hochbauer, T.; Nastasi, M.; Mayer, J.W. // Applied Physics Letters;12/20/1999, Vol. 75 Issue 25, p3938 

    Presents a research that studied the depths of hydrogen surface blisters in <100> n-type silicon, which formed after boron(B)-hydrogen(H) coimplantation and heat treatment. Three different dopant levels of the silicon substrates; Overlapping H- and B-implantation distributions at the chosen...

  • The effect of heat treatments on the structure and composition of Al(0.8% Si)/TiW/polycrystalline Si system. Berger, S.; Komem, Y.; Weiss, B. Z. // Journal of Applied Physics;4/15/1991, Vol. 69 Issue 8, p4341 

    Presents a study which examined the effect of heat treatments on the structure and composition of a system consisting of a conductive outer layer made of aluminum (Al) thin film. Diffusion barrier between an Al thin film and a polycrystalline silicon substrate; Experimental details;...

  • Al induced crystallization of a-Si. Radnoczi, G.; Robertsson, A.; Hentzell, H. T. G.; Gong, S. F.; Hasan, M.-A. // Journal of Applied Physics;5/1/1991, Vol. 69 Issue 9, p6394 

    Presents a study that investigated the crystallization of amorphous silicon induced by aluminum during heat treatment. Structures of as-deposited layers; Effect of aluminum concentration on metal induced crystallization; Mechanism of metal-induced crystallization.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics