TITLE

GaSb0.5As0.5/Al0.35Ga0.65Sb0.48As0.52 superlattice lattice matched to InP prepared by molecular beam epitaxy

AUTHOR(S)
Tsang, W. T.; Chiu, T. H.; Chu, S. N. G.; Ditzenberger, J. A.
PUB. DATE
April 1985
SOURCE
Applied Physics Letters;4/1/1985, Vol. 46 Issue 7, p659
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have shown, against conventional belief, for the first time that high quality GaSb0.5As0.5/Al0.35Ga0.65Sb0.48As0.52 superlattices lattice matched to InP substrate can be grown by molecular beam epitaxy in spite of the existence of extensive miscibility gap in this material system. The superlattices have excellent heterointerfaces as examined by in situ reflection high-energy electron diffraction during growth and transmission electron microscope afterwards. The surface morphology was smooth and mirrorlike as observed under Nomarski phase contrast microscope when lattice mismatch Δa/a was <=1×10-3. These superlattices exhibited a 40 times more intense room-temperature photoluminescence than high quality GaSb05As05 single epilayers. Quantum size effect was also observed for the first time in these new superlattices.
ACCESSION #
9817005

 

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