Monolithic integrated receiver front end consisting of a photoconductive detector and a GaAs selectively doped heterostructure transistor

Chen, C. Y.; Olsson, N. A.; Tu, C. W.; Garbinski, P. A.
April 1985
Applied Physics Letters;4/1/1985, Vol. 46 Issue 7, p681
Academic Journal
We report the first demonstration of a monolithically integrated receiver front end consisting of a GaAs selectively doped heterostructure transistor (SDHT) and a photoconductive detector. Due to its simplicity in the required epitaxial layers and device fabrication, the photoconductive detector/SDHT integration scheme is one of the simplest ever reported. The detector has a measured gain-bandwidth product of 5 GHz and the SDHT has a transconductance of 100–140 mS/mm. For an error rate of 10-9 at 90 MHz, the receiver has sensitivities at 0.82 μm of -36.2 dBm and -42.2 dBm for pseudorandom patterns and fixed bit patterns of 101010..., respectively, for an uncoated device.


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