Seed selection through ion channeling to modify crystallographic orientations of polycrystalline Si films on SiO2: Implant angle dependence

Kung, K. T-Y.; Iverson, R. B.; Reif, R.
April 1985
Applied Physics Letters;4/1/1985, Vol. 46 Issue 7, p683
Academic Journal
Polycrystalline silicon films 4800 Å thick deposited by low pressure chemical vapor deposition at 620 °C on oxidized silicon wafers have been amorphized by implantation with 210-keV Si28 ions to a dose of 1015 cm-2 at 0°, 1°, 3°, 5°, or 7° from normal incidence and subsequently recrystallized at 700 °C. The as-deposited film was {110} textured with the <110> directions within ±20° of the surface normal. After the 0°, 1°, or 3° implant and subsequent recrystallization, most of the <110> directions were confined to within ±4° of the corresponding implant direction. For the 5° and 7° implants, the <110> directions in the recrystallized layers became randomly oriented; that is, the films lost their {110} texture. These results can be explained by the process of seed selection through ion channeling (SSIC): the grains that survived the 0°, 1°, or 3° implant due to ion channeling acted as seeds during recrystallization. The fact that the direction of the <110> axes in the recrystallized films was coincident with the implant angle strongly supports the existence of the SSIC process.


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