TITLE

Rapid thermal annealing of Al-Si contacts

AUTHOR(S)
Pai, C. S.; Cabreros, E.; Lau, S. S.; Seidel, T. E.; Suni, I.
PUB. DATE
April 1985
SOURCE
Applied Physics Letters;4/1/1985, Vol. 46 Issue 7, p652
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Contact formation of Al on n+-Si by rapid thermal annealing has been investigated. It was found that contact resistivity of the order of 6×10-7 Ω cm2 can be reproducibly achieved. The uniformity of the contact area morphology is much improved due to the limited Si migration into the Al metallization. Flat contact morphology can be obtained with a combined technique of ion mixing and rapid thermal annealing.
ACCESSION #
9816988

 

Related Articles

  • Thermal stability of plasma-nitrided aluminum oxide films on Si. Bastos, K. P.; Pezzi, R. P.; Miotti, L.; Soares, G. V.; Driemeier, C.; Morais, J.; Baumvol, I. J. R.; Hinkle, C.; Lucovsky, G. // Applied Physics Letters;1/5/2004, Vol. 84 Issue 1, p97 

    The effect of post-deposition rapid thermal annealing in vacuum and in dry O[sub 2] on the stability of remote plasma-assisted nitrided aluminum oxide films on silicon is investigated. The areal densities of Al, O, N, and Si were determined by nuclear reaction analysis and their concentration...

  • Defect passivation in multicrystalline silicon for solar cells. Tarasov, I.; Ostapenko, S.; Nakayashiki, K.; Rohatgi, A. // Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4346 

    We report on the effect of hydrogen passivation in ribbon multicrystalline silicon (mc-Si) wafers from SiNx:H anti-reflecting layer using simultaneous rapid thermal annealing of Al back-contact and SiNx anti-reflection coating on the front (RTP-Al/SiNx). Scanning room-temperature...

  • Rapid thermal annealing characteristics of bulk AlInAs/InP and AlInAs/GaInAs/InP high electron mobility transistor structures with planar silicon doping. Kiziloglu, Kürşad; Hashemi, Majid M.; Yin, Lie-Wei; Li, Yuan Jing; Petroff, Pierre M.; Mishra, Umesh K.; Brown, April S. // Journal of Applied Physics;10/15/1992, Vol. 72 Issue 8, p3798 

    Presents a study which examined the effects of high temperature rapid thermal annealing process on carrier concentration and mobility of bulk aluminum indium arsenide and aluminum indium arsenide/gallium indium arsenide high mobility transistor structures with planar silicon doping. Factor...

  • Two-step rapid thermal annealing of Si-implanted InP:Fe. Rao, Mulpuri V.; Thompson, Phillip E. // Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1444 

    Rapid thermal annealing has been used to electrically activate Si-implanted InP:Fe. A two-step annealing cycle in which the short (5 s) high-temperature step is followed by a relatively long (25–60 s) 100 °C lower temperature step gave higher activation and carrier mobility than the...

  • Rapid thermal annealing and regrowth of thermal donors in silicon. Stein, Herman J.; Hahn, S. K.; Shatas, S. C. // Journal of Applied Physics;5/15/1986, Vol. 59 Issue 10, p3495 

    Presents a study that investigated the rapid thermal annealing of thermal donors in silicon by infrared absorption and resistivity measurements. Information on a tool used for investigating defect annealing mechanisms in solids; Illustration of wafer position and temperature response for a wire...

  • Thermal donor annihilation and defect production in n-type silicon by rapid thermal annealing. Tokuda, Yutaka; Kobayashi, Nobuji; Usami, Akira; Inoue, Yajiro; Imura, Makoto // Journal of Applied Physics;10/15/1989, Vol. 66 Issue 8, p3651 

    Presents a study that investigated the thermal donor introduction and annihilation in Czochralski n-type silicon by rapid thermal annealing. Methodology; Examination of the defects induced by rapid thermal annealing; Analysis of the RTA temperature dependence of the induced traps.

  • Quenched-in defect removal through silicide formation by rapid thermal processing. Mathiot, Daniel // Applied Physics Letters;1/14/1991, Vol. 58 Issue 2, p131 

    Studies the influence of TiSi[sub 2] silicidation on the formation of the quenched-in defects created by rapid thermal processing (RTP). Deep level transient spectroscopy results after RTP; Cause of the removal of defects during RTP.

  • Gold gettering induced by rapid thermal doping using spin-on sources. Hartiti, B.; Muller, J.C.; Siffert, P. // Applied Physics Letters;7/22/1991, Vol. 59 Issue 4, p425 

    Reports that the rapid thermal processing (RTP) diffusion of phosphorus or boron from a spin-on deposited layer can induce a gettering effect in silicon. Redistribution of the gold accepted level for gold-contaminated samples; Depletion of gold in regions below the surfaces; Mechanism of the...

  • Rapid-thermal-oxidized porous Si--The superior photoluminescent Si. Petrova-Koch, V.; Muschik, T. // Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p943 

    Evaluates the use of rapid-thermal oxidation to improve the stability of porous silicon prepared by electrochemical etching. Replacement of the hydride coverage of the internal surfaces of the pores; Retention of the nanometer-sized silicon grains; Effect of increasing process temperature.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics