Doping interface dipoles: Tunable heterojunction barrier heights and band-edge discontinuities by molecular beam epitaxy

Capasso, Federico; Cho, Alfred Y.; Mohammed, Khalid; Foy, Philip W.
April 1985
Applied Physics Letters;4/1/1985, Vol. 46 Issue 7, p664
Academic Journal
We have succeeded for the first time in artificially tuning the conduction and valence-band barrier heights at an abrupt intrinsic semiconductor-semiconductor heterojunction via a doping interface dipole (DID). This is achieved by means of ultrathin ionized donor and acceptor sheets in situ grown within <=100 Ã… from the heterointerface by molecular beam epitaxy. In the limit of a few atomic layers separation between the charge sheets this amounts to modify the effective band-edge discontinuities. A near one order of magnitude enhancement in the photocollection efficiency of an abrupt AlGaAs/GaAs heterojunction has been observed as result of the conduction-band barrier lowering induced by the DID.


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