TITLE

Photoluminescence studies of the neutralization of acceptors in silicon by atomic hydrogen

AUTHOR(S)
Thewalt, M. L. W.; Lightowlers, E. C.; Pankove, J. I.
PUB. DATE
April 1985
SOURCE
Applied Physics Letters;4/1/1985, Vol. 46 Issue 7, p689
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A number of recent electrical transport studies have shown that low-temperature treatment in plasmas containing atomic H can neutralize acceptors in Si. We have studied this process by monitoring the bound exciton luminescence associated with the implanted acceptor impurities B, In, and Tl. Treatment in an atomic H plasma was found to substantially reduce the acceptor bound exciton luminescence while leaving unchanged the lines due to an implanted donor, As, thus verifying the conclusions of the transport studies.
ACCESSION #
9816985

 

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