Photoluminescence studies of the neutralization of acceptors in silicon by atomic hydrogen

Thewalt, M. L. W.; Lightowlers, E. C.; Pankove, J. I.
April 1985
Applied Physics Letters;4/1/1985, Vol. 46 Issue 7, p689
Academic Journal
A number of recent electrical transport studies have shown that low-temperature treatment in plasmas containing atomic H can neutralize acceptors in Si. We have studied this process by monitoring the bound exciton luminescence associated with the implanted acceptor impurities B, In, and Tl. Treatment in an atomic H plasma was found to substantially reduce the acceptor bound exciton luminescence while leaving unchanged the lines due to an implanted donor, As, thus verifying the conclusions of the transport studies.


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