8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm

Lutgen, S.; Albrecht, T.; Brick, P.; Reill, W.; Luft, J.; Späth, W.
May 2003
Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3620
Academic Journal
We demonstrate more than 8-W continuous-wave output power with good beam quality (M² <1.8) from an optically pumped semiconductor disk laser. The combination of low threshold density of 470 W/cm² and high differential efficiency of 60% results in an optical-to-optical conversion efficiency of 46% for this high output level. Good epitaxial quality and low thermal resistance allow the scaling of output power with pump spot area.


Related Articles

  • Temperature dependence of long wavelength semiconductor lasers. O'Gorman, J.; Levi, A.F.J. // Applied Physics Letters;3/2/1992, Vol. 60 Issue 9, p1058 

    Compares the temperature dependent characteristics of multiple quantum well semiconductor laser diodes and light emitting diodes. Examination of the role of Auger recombination; Growth of the device material by low pressure metalorganic vapor phase epitaxy; Designation of net optical gain as...

  • 2.2 μm GaInAsSb/AlGaAsSb injection lasers with low threshold current density. Caneau, C.; Zyskind, J. L.; Sulhoff, J. W.; Glover, T. E.; Centanni, J.; Burrus, C. A.; Dentai, A. G.; Pollack, M. A. // Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p764 

    Double heterostructure 2.2 μm wavelength lasers were fabricated from Ga0.84In0.16As0.15Sb0.85/ AlxGa1-xAs0.04Sb0.96 wafers grown by liquid phase epitaxy. These structures were grown with Al-rich confinement layers (x=0.4) for optical confinement and thin intermediate cladding layers (x=0.34)...

  • Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser.... Hobson, W.S.; Wu, M.C. // Applied Physics Letters;2/3/1992, Vol. 60 Issue 5, p598 

    Examines the epitaxial growth of periodic index separate confinement heterostructure indium gallium arsenide/aluminum gallium arsenide multiple quantum well laser. Use of organometallic vapor phase epitaxy; Structural characterization using secondary ion mass spectrometry; Comparison with...

  • Reproducible liquid phase epitaxial growth of InGaAsP buried heterostructure lasers. Logan, R. A.; Temkin, H.; Blaha, J. P.; Strege, K. E. // Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1407 

    Buried heterostructure lasers are formed using double heterostructure planar layers which are masked and etched to define laser mesas, with final regrowth by liquid phase epitaxy. Controlled melt etching of the exposed wafer surface is introduced just prior to the liquid phase epitaxial regrowth...

  • Very low-threshold separate-confinement-heterostructure lasers prepared by liquid phase epitaxy. Mukai, S.; Tsunekawa, Y.; Takabe, Y.; Yajima, H. // Journal of Applied Physics;7/15/1985, Vol. 58 Issue 2, p1052 

    Presents a study that prepared AlGaAs separate-confinement-heterostructure lasers with low threshold current density by liquid phase epitaxy. Main challenge of the research of semiconductor lasers; Determination of the threshold current and the differential quantum efficiency; Dependence of...

  • Low-damage etched/regrown interface of strain-compensated GaInAsP/InP quantum-wire laser fabricated by CH[sub 4]/H[sub 2] dry etching and regrowth. Yagi, Hideki; Muranushi, Kengo; Nunoya, Nobuhiro; Sano, Takuya; Tamura, Shigeo; Arai, Shigehisa // Applied Physics Letters;8/5/2002, Vol. 81 Issue 6, p966 

    GaInAsP/InP strain-compensated five-layered quantum-wire lasers with the wire width of 23 nm were fabricated by electron-beam lithography, CH[sub 4]/H[sub 2]-reactive ion etching and organometallic vapor-phase-epitaxial regrowth, and the quality of the etched/regrown interface was evaluated from...

  • Low threshold current AlGaAs/GaAs distributed feedback laser grown by two-step molecular beam epitaxy. Kojima, Keisuke; Noda, Susumu; Mitsunaga, Kazumasa; Kyuma, Kazuo; Nakayama, Takashi // Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p570 

    AlGaAs/GaAs distributed feedback lasers with oxide-stripe structure were fabricated by two-step molecular beam epitaxy (MBE) growth for the first time. The large coupling coefficient of 90 cm-1 was obtained by controlling precisely the thickness of each layer. As a result, the threshold current...

  • InAsSb/InAsSbP Double-Heterostructure Lasers Emitting in the 3�4 �m Spectral Range. Danilova, T. N.; Imenkov, A. N.; Kolchanova, N. M.; Yakovlev, Yu. P. // Semiconductors;Dec2001, Vol. 35 Issue 12, p1404 

    Our earlier reports concerning the fabrication by liquid-phase epitaxy and investigation of InAsSbP/InAsSb/InAsSbP double heterostructure lasers emitting at 3-4 �m are reviewed. The dependences of spectral characteristics and the spatial distribution of the laser emission on temperature and...

  • Quantum well lasers with active region grown by laser-assisted atomic layer epitaxy. Chen, Q.; Osinski, J. S.; Dapkus, P. D. // Applied Physics Letters;10/1/1990, Vol. 57 Issue 14, p1437 

    Laser-assisted atomic layer epitaxy (LALE) is used to locally deposit device-quality material for the first time, as demonstrated by successfully fabricating broad-area lasers with a GaAs quantum well grown in this way. By hybridizing LALE with conventional metalorganic chemical vapor deposition...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics