Improved photoluminescence of pulsed-laser-ablated Y[sub 2]O[sub 3]:Eu[sup 3+] thin-film phosphors by Gd substitution

Bae, Jong Seong; Jeong, Jung Hyun; Yi, Soung-soo; Park, Jung-Chul
May 2003
Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3629
Academic Journal
Gd-substituted Y[sub 2-x]Gd[sub x]O[sub 3]:Eu[sup 3+] luminescent thin films have been grown on Al[sub 2]O[sub 3] (0001) substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, surface morphology, and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The PL brightness data obtained from Y[sub 2-x]Gd[sub x]O[sub 3]:Eu[sub 3+] films grown under optimized conditions have indicated that the PL brightness is more dependent on the surface roughness than on the crystallinity of the films. In particular, the incorporation of Gd into Y[sub 2]O[sub 3] lattice could induce a remarkable increase of PL. The highest emission intensity was observed with Y[sub 1.35]Gd[sub 0.60]Eu[sub 0.05]O[sub 3], thin film whose brightness was increased by a factor of 3.1 in comparison with that of Y[sub 2]O[sub 3]:Eu[sup 3+] films. This phosphor has promise for application to the flat panel displays.


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