Photoinduced phase transition of metallic SmS thin films by a femtosecond laser

Kitagawa, R.; Takebe, H.; Morinaga, K.
May 2003
Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3641
Academic Journal
Metallic SmS thin films with 100-2000 nm in thickness were prepared by rf magnetron sputtering. The metallic- to semiconductor-phase transition was induced by a regeneratively amplified mode-locked Ti:sapphire laser. The shifts of the (200) peak due to the phase transition were observed by grazing incidence x-ray diffraction (GIXD) analysis. This phase transition was accompanied by the significant reflectance change of the thin films up to 45% in the near-infrared region. The depth of the phase transition layer from the surface of the film irradiated by a femtosecond laser pulse was estimated ∼200 nm from the depth profile of GIXD.


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