Tuning the structural and optical properties of 1.3-μm InAs/GaAs quantum dots by a combined InAlAs and GaAs strained buffer layer

Liu, H. Y.; Hopkinson, M.
May 2003
Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3644
Academic Journal
A combined InAlAs and GaAs strained buffer layer was presented to tailor the structural and optical properties of 1.3-µm InAs/GaAs quantum dots. This growth technique exhibits an increment of InAs quantum-dot density from 1.6 × 10[sup 10] to 2.8 × 10[sup 10] cm[sup -2] and an improvement of energy separation between the quantum-dot ground and first-excited states from 84 to 93 meV upon adjusting the thickness of GaAs in InAlAs-GaAs buffer layer. We also investigate the effect of an InAlAs layer surrounding InAs quantum dots on photoluminescence intensity with increasing the thickness of InAlAs layer in a 6-nm InAlAs-InGaAs composite cap layer, and no negative effect has been observed.


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