TITLE

Boron uphill diffusion during ultrashallow junction formation

AUTHOR(S)
Duffy, R.; Venezia, V. C.; Heringa, A.; Hüsken, T. W. T.; Hopstaken, M. J. P.; Cowern, N. E. B.; Griffin, P. B.; Wang, C. C.
PUB. DATE
May 2003
SOURCE
Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3647
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.
ACCESSION #
9815656

 

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