Deep level defect in Si-implanted GaN n[sup +]-p junction

Chen, X. D.; Huang, Y.; Fung, S.; Beling, C. D.; Ling, C. C.; Sheu, J. K.; Lee, M. L.; Chi, G. C.; Chang, S. J.
May 2003
Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3671
Academic Journal
A deep level transient spectroscopy (DLTS) study has been performed on a GaN n[sup +]-p junction fabricated by implanting Si into a Mg-doped p-type GaN epilayer. A high concentration of a deep level defect has been revealed within the interfacial region of the junctions by the unusual appearance of a minority peak in the majority carrier DLTS spectra. The deep level defect appears to be an electron trap at E[sub C]-0.59 eV in the p-side region of the junction and has tentatively been attributed to the V[sub N]-Mg complex. The high concentration of this electrically active deep level defect in the depletion layer of the Si-implanted GaN n[sup +]-p junction diodes suggests the need for further investigations.


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