Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems

Fujieda, Shinji; Miura, Yoshinao; Saitoh, Motofumi; Hasegawa, Eiji; Koyama, Shin; Ando, Koichi
May 2003
Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3677
Academic Journal
Interface defects generated by negative-bias temperature stress (NBTS) in an ultrathin plasmanitrided SiON/Si(100) system were characterized by using D[sub 2] annealing, conductance-frequency measurements, and electron-spin resonance measurements. D[sub 2] annealing was shown to lower negative-bias temperature instability (NBTI) than H[sub 2] annealing. Interfacial Si dangling bonds (P[sub b1] and P[sub b0] centers), whose density is comparable to an increase in interface trap density, were detected in a NBTS-stressed sample. The NBTI of the plasma-nitrided SiON/Si system was thus shown to occur through P[sub b] depassivation. Furthermore, the nitridation was shown to increase the P[sub b1]/P[sub b0] density ratio and modify the P[sub b1] structure. Such a predominance and structural modification of P[sub b1] centers are presumed to increase NBTI by enhancing the P[sub b]-H dissociation. Although we suggest that NBTS may also induce non-P[sub b] defects, nitrogen dangling bonds do not seem to be included in them.


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