TITLE

InAs nanowires and whiskers grown by reaction of indium with GaAs

AUTHOR(S)
He, Maoqi; Fahmi, M. M. E.; Mohammad, S. Noor; Jacobs, Randolph N.; Salamanca-Riba, Lourdes; Felt, Frederick; Jah, Muzar; Sharma, Ashok; Lakins, Darryl
PUB. DATE
May 2003
SOURCE
Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3749
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Free-standing InAs nanowires and whiskers were grown employing reaction of indium (In) liquid and vapor with GaAs substrate. The arsenic (As) atoms resulting from this reaction were transported by a flow of N[sub 2] or NH[sub 3] to the growth location where they reacted with In to produce InAs nanowires and whiskers. Scanning electron microscopy, energy dispersive x-ray spectroscopy, and transmission electron microscopy of the products indicate that the diameter of the nanowires and whiskers ranges from 15 nm to 2 µm depending on the growth temperature, the composition is InAs, and the structure is zinc-blende crystal with [110] or [100] growth direction. The As source and growth mechanism were discussed. The method for synthesis involved no any template, catalyst, toxic As source, nor even lattice matched substrate.
ACCESSION #
9815482

 

Related Articles

  • Evolution of InAs branches in InAs/GaAs nanowire heterostructures. Paladugu, M.; Zou, J.; Auchterlonie, G. J.; Guo, Y. N.; Kim, Y.; Joyce, H. J.; Gao, Q.; Tan, H. H.; Jagadish, C. // Applied Physics Letters;9/24/2007, Vol. 91 Issue 13, p133115 

    Branched nanowire heterostructures of InAs/GaAs were observed during Au-assisted growth of InAs on GaAs nanowires. The evolution of these branches has been determined through detailed electron microscopy characterization with the following sequence: (1) in the initial stage of InAs growth, the...

  • Heat capacity of GaB and InB (B = P, As, Sb) above 298 K. Pashinkin, A.; Fedorov, V.; Malkova, A.; Mikhailova, M. // Inorganic Materials;Sep2010, Vol. 46 Issue 9, p1007 

    The heat capacity of indium phosphide has been measured from 350 to 750 K. The results are used to more accurately determine the best fit equation for the C( T) of InP. We analyze our and others’ heat capacity data for the III–V compounds (except for the Group III nitrides) at...

  • Sharp exciton emission from single InAs quantum dots in GaAs nanowires. Panev, Nikolay; Persson, Ann I.; Sköld, Niklas; Samuelson, Lars // Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2238 

    We have performed photoluminescence spectroscopy on single GaAs nanowires with InAs quantum dots in the form of thin slices of InAs, possibly alloyed with Ga as InGaAs, incorporated into the GaAs. The nanowires were grown by chemical beam epitaxy using gold nanoparticles as catalysts. The...

  • Analytical description of the metal-assisted growth of III–V nanowires: Axial and radial growths. Plante, Martin C.; LaPierre, Ray R. // Journal of Applied Physics;Jun2009, Vol. 105 Issue 11, p114304 

    The growth of III–V nanowires from metal seed particles is described in an analytical manner within the framework of a material conservation model. Direct impingement of growth species on the particle, coupled to their diffusion from the sidewall and the substrate surface, are considered...

  • Lineshape analysis of Raman scattering from LO and SO phonons in III-V nanowires. Begum, N.; Bhatti, A. S.; Jabeen, F.; Rubini, S.; Martelli, F. // Journal of Applied Physics;Dec2009, Vol. 106 Issue 11, p114317-1 

    Micro-Raman spectroscopy is employed to study the phonon confinement in Au- and Mn-catalyzed GaAs and InAs nanowires. The phonon confinement model is used to fit the LO phonon peaks, which also takes into account the contribution to the asymmetry of the line shape due to the presence of surface...

  • Growth and transport properties of InAs epilayers on GaAs. Kalem, Seref; Chyi, Jen-Inn; Morkoç, Hadis; Bean, Ross; Zanio, Ken // Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1647 

    A series of InAs epitaxial layers with thicknesses ranging from 0.5 up to 6.2 μm was grown on (100) oriented semi-insulating GaAs substrates by molecular beam epitaxy. The transport properties of the layers have been investigated by Hall effect measurements down to 10 K. The properties of the...

  • Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures. Söderström, J. R.; Chow, D. H.; McGill, T. C. // Applied Physics Letters;9/25/1989, Vol. 55 Issue 13, p1348 

    We report large peak-to-valley current ratios in InAs/AlxGa1-xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is...

  • Growth of a novel InAs-GaAs strained layer superlattice on InP. Tamargo, M. C.; Hull, R.; Greene, L. H.; Hayes, J. R.; Cho, A. Y. // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p569 

    Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.

  • Pulsed laser atom probe analysis of GaAs and InAs. Cerezo, A.; Grovenor, C. R. M.; Smith, G. D. W. // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p567 

    A pulsed laser atom probe has been used to obtain the first stoichiometrically correct analysis of GaAs and InAs. These results are presented, together with a comparison of results obtained from conventional and pulsed laser atom probes.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics