InAs nanowires and whiskers grown by reaction of indium with GaAs

He, Maoqi; Fahmi, M. M. E.; Mohammad, S. Noor; Jacobs, Randolph N.; Salamanca-Riba, Lourdes; Felt, Frederick; Jah, Muzar; Sharma, Ashok; Lakins, Darryl
May 2003
Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3749
Academic Journal
Free-standing InAs nanowires and whiskers were grown employing reaction of indium (In) liquid and vapor with GaAs substrate. The arsenic (As) atoms resulting from this reaction were transported by a flow of N[sub 2] or NH[sub 3] to the growth location where they reacted with In to produce InAs nanowires and whiskers. Scanning electron microscopy, energy dispersive x-ray spectroscopy, and transmission electron microscopy of the products indicate that the diameter of the nanowires and whiskers ranges from 15 nm to 2 µm depending on the growth temperature, the composition is InAs, and the structure is zinc-blende crystal with [110] or [100] growth direction. The As source and growth mechanism were discussed. The method for synthesis involved no any template, catalyst, toxic As source, nor even lattice matched substrate.


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