Carrier storage and capture dynamics in quantum-dot heterostructures

Smith, J. M.; Dalgarno, P. A.; Urbaszek, B.; McGhee, E. J.; Buller, G. S.; Nott, G. J.; Warburton, R. J.; Garcia, J. M.; Schoenfeld, W.; Petroff, P. M.
May 2003
Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3761
Academic Journal
Photoluminescence and time-resolved photoluminescence measurements of charge tunable quantum-dot heterostructures reveal that by appropriate biasing of the device, about 90% of photogenerated holes can be stored at an interface near to the nanostructures and subsequently transferred into the nanostructures in a controlled fashion. The capture dynamics are sensitive to the form of the valence band potential in the layer that caps the Stranski-Krastanow dots. The dependence of the capture rate on applied electric field suggests that the valence band confinement potential is "soft" in the capping layer, with a spatial extent of around 14 nm.


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