TITLE

A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy

AUTHOR(S)
Ivanov, S. V.; Kaygorodov, V. A.; Sorokin, S. V.; Meltser, B. Ya.; Solov’ev, V. A.; Terent’ev, Ya. V.; Lyublinskaya, O. G.; Moiseev, K. D.; Grebenshchikova, E. A.; Mikhailova, M. P.; Toropov, A. A.; Yakovlev, Yu. P.; Kop’ev, P. S.; Alferov, Zh. I.
PUB. DATE
May 2003
SOURCE
Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3782
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A mid-IR laser based on a hybrid pseudomorphic AlGaAsSb/InAs/CdMgSe heterostructure with a III-V/II-VI heterovalent interface at the 0.6-µm-InAs active region has been fabricated by molecular-beam epitaxy on p[sup +]-InAs substrate. It provides ∼1.5-eV asymmetric barriers for both electrons and holes in InAs, inhibiting carrier leakage from the active region. Despite a nonoptimal defect density at the CdMgSe/InAs interface (10[sup 6]-10[sup 7] cm[sup -2]), the structure demonstrates lasing at ∼2.78 µm (up to 100 K) under pulse injection pumping with the threshold current density of 3-4 kA/cm². The proposed design is promising for high-power mid-IR lasers operating at room temperature.
ACCESSION #
9815441

 

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