Chemical images generated by large area homogeneous illumination of metal–insulator–semiconductor structures

Filippini, D.; Lundström, I.
May 2003
Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3791
Academic Journal
A controlled large area illumination, provided by a computer screen, is used to induce distinctive chemical images in field-effect devices upon gas exposure. The present measuring method uses the concurrent optical and chemical modulation of the semiconductor surface potential of a single metal-oxide-semiconductor capacitor to generate two-dimensional photocurrent images, displayed in a bias voltage-color space. Selective patterns for hydrogen, ammonia, and propene are demonstrated. The use of a computer screen as a programable light source allows to simplify a normally complex setup, making the technique more attractive for practical applications.


Related Articles

  • Interface studies and electrical properties of plasma sulfide layers on n-type InP. Klopfenstein, P.; Bastide, G.; Rouzeyre, M.; Gendry, M.; Durand, J. // Journal of Applied Physics;1/1/1988, Vol. 63 Issue 1, p150 

    Investigates the conditions and basic interface properties of InP-sulfide-metal structures formed by direct and indirect plasma-enhanced sulfidation. Examination of substrate temperatures used for sulfide growing; Fabrication of test metal-insulator-semiconductor capacitors; Concentration and...

  • Photocapacitance Effect at Low Temperatures in a Unipolar MIS Capacitor with a Semiconductor Electrode Doped with Two Different Acceptor Impurities. Penin, N. A. // Semiconductors;Oct2001, Vol. 35 Issue 10, p1155 

    The photocapacitance effect at low temperatures in a unipolar MIS capacitor with a semiconductor electrode doped with two types of acceptor impurities characterized by different ionization energies E[sub ia] (deep-level acceptor) and E[sub ib] (shallow-level acceptor) is examined theoretically....

  • Si[sub 3]N[sub 4]/Si/n-GaAs capacitor with minimum interface density in the 10[sup 10].... Wang, Z.; Lin, M.E.; Biswas, D.; Mazhari, B.; Terguchi, N.; Fan, Z.; Gui, X.; Morkoc, H. // Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p2977 

    Presents the Si[sub 3]N[sub 4]/silicon/gallium arsenide capacitors with minimum interface density. Assistance of atomic hydrogen during in situ growth of silicon; Details on the hysteresis and frequency dispersion levels in the metal-insulator-semiconductor capacitor.

  • Physical parameters of GaInAs/Si3N4 interface states obtained by the conductance method. Barrier, Joël; Boher, Pierre; Renaud, Monique // Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1192 

    Interface state parameters were studied in TiAu/Si3N4/Ga0.47In0.53As metal-insulator-semiconductor capacitors by conductance and capacitance measurements at various temperatures. The analysis of the data, taking into account the variation of the capture cross section versus energy, allows us to...

  • Voltage ramp breakdown analysis of thick plasma-deposited Si3N4 metal-insulator-metal capacitors. Sterrett, James E. // Journal of Applied Physics;5/15/1990, Vol. 67 Issue 10, p6415 

    Presents the voltage ramp breakdown analysis of thick plasma-deposited Si[sub3]N[sub4] metal-insulator-metal capacitors. Capacitor fabrication and measurement; Voltage ramp parameters; Details of the experimental method used.

  • Degradation characteristics of metal/Al2O3/n-InGaAs capacitors. Palumbo, F.; Eizenberg, M. // Journal of Applied Physics;2014, Vol. 115 Issue 1, p1 

    Implementation of new materials in Metal-Oxide-Semiconductor stacks requires capabilities to predict long-time degradation as well as the impact of process changes on degradation processes. In this work, the degradation under constant voltage stress of metal gate/Al2O3/InGaAs stacks is studied...

  • Si/Ge/S multilayer passivation of GaAs(100) for metal-insulator-semiconductor capacitors. Lu, Z.H.; Landheer, D. // Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1702 

    Describes the silicon/germanium/sulfur (S) multilayer passivation of gallium arsenide (GaAs)(100) for metal-insulator-semiconductor capacitors. Absence of Ga and As oxides on the GaAs surface; Preservation of the Ga-S-Ga bridge bond termination on the surface; Analysis of capacitors using high...

  • Real-time observations of hydrogen drift and diffusion in silicon. Seager, C. H.; Anderson, R. A. // Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1181 

    Real-time detection of hydrogen motion and bonding has been accomplished by capacitance voltage profiling of various Schottky and metal- insulator-semiconductor capacitors during low-energy H ion beam injection into the barrier metallization. Finite element analysis modeling of the data...

  • Effects of electrical stress on the leakage current characteristics of multilayer capacitor structures. Soon-Wook Kim; Sung Kyun Lee; Do Kim, Young; Sibum Kim // Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p262904 

    The degradation of a high-k dielectric multilayer was investigated by measuring the time dependent leakage current under a constant voltage stress in metal-insulator-metal capacitor structures. When comparing the two multilayer structures of Al2O3/HfO2/Al2O3 and HfO2/Al2O3/HfO2, the former was...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics