Fabrication of Ge–Au film thermometers using interfacial atomic diffusion

Zhu, Da-Ming; Lin, Fengqi
September 1993
Review of Scientific Instruments;Sep93, Vol. 64 Issue 9, p2624
Academic Journal
We describe a new method which utilizes an interfacial atomic diffusion mechanism to fabricate Ge-Au film thermometers. The thermometers were made of multiple Ge/Au layers. In situ resistance measurements during the fabrication process indicate that Au and Ge atoms were diffused into neighboring layers. When the deposited Au layer thickness in a multilayer film is between 8 and 10 Ã…, the resistance of the film shows a power law behavior over a wide temperature range. As the Au layer thickness increases to beyond 10 Ã…, the resistance of the film becomes less sensitive to temperature. Both the temperature dependence and the magnitude of the film resistance are consistent with results obtained in Ge-Au alloys.


Related Articles

  • ([Square_Root]3×[Square_Root]3)B structure on a (5×5)GexSi1-x/Si (111) surface. Tatsumi, T.; Hirosawa, I.; Niino, T.; Hirayama, H.; Mizuki, J. // Applied Physics Letters;10/1/1990, Vol. 57 Issue 14, p1395 

    A ([Square_Root]3×[Square_Root]3)B structure was found to be formed on a (5×5) GexSi1-x/Si (111) surface on which Ga or Sn atoms did not form any superstructures. The critical B coverage at which a (7×7) pattern disappeared and only a ([Square_Root]3×[Square_Root]3) pattern was...

  • Electrical properties of the interface between YBa2Cu3Ox films and various substrates. Ying, Q. Y.; Kwok, H. S. // Applied Physics Letters;4/9/1990, Vol. 56 Issue 15, p1478 

    The electrical properties of the interfacial layers between YBCO films and various substrates were studied using in situ resistivity measurements. It was found that this method is sensitive to even a 10-Ã…-thick interface layer. Moreover, it yields the resistivity of the interfacial layer and...

  • Theory of the characteristic curves of the silver chalcogenide glass inorganic photoresists. Das, Amitabha; Al-Jishi, Radi // Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1745 

    A theoretical model of the characteristic curves of the silver/chalcogenide glass inorganic photoresists, which is based explicitly on a photoinduced diffusion theory of the photodoping phenomenon, is presented. Besides the photoinduced diffusion of silver in the bulk glass, the role of the...

  • Diffuse interface theory for homogeneous vapor condensation. Gránásy, László // Journal of Chemical Physics;4/1/1996, Vol. 104 Issue 13, p5188 

    The excess free energy of nuclei is evaluated in terms of a characteristic interface thickness related to bulk physical properties. A curvature correction to the surface tension of nuclei up to second order in terms of the characteristic thickness is obtained. A nucleation theory free of...

  • Characterization of interdiffusion coefficients in GaAs-AlAs superlattices with laser Raman spectroscopy. Hara, Naoki; Katoda, Takashi // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2112 

    Describes a method to estimate the interdiffusion coefficients in superlattices. Response of interdiffusion coefficients to annealing; Discussion on the difference in the approximation of compositional variation at the interface; Functionality of thermal instability of superlattices.

  • X-ray photoelectron spectroscopy study of Al/Ta[sub 2]O[sub 5] and Ta[sub 2]O[sub 5]/Al buried.... Chen, K.; Yang, G.R. // Applied Physics Letters;1/20/1997, Vol. 70 Issue 3, p399 

    Examines the aluminum/tantalum pentoxide (Al/Ta[sub 2]O[sub 5]) and Ta[sub 2]O[sub 5]/Al buried interfaces using x-ray photoelectron spectroscopy. Purpose of employing the peak decomposition technique; Usefulness of tantalum pentoxide to the storage capacitor dielectric; Estimation of the...

  • Electronic structure and adhesion on metal-aluminum-oxide interfaces. Kulkova, S.; Eremeev, S.; Hocker, S.; Schmauder, S. // Physics of the Solid State;Dec2010, Vol. 52 Issue 12, p2589 

    This paper reports on the results of the systematic analysis of the atomic and electronic structure of the Me/α-AlO(0001) interfaces for two series of isoelectronic metals ( Me = Cu, Ag, Au and Ni, Pd, Pt), depending on the termination of the oxide substrate and the configuration of oxide...

  • Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high-k/metal gate stacks. Batude, P.; Garros, X.; Clavelier, L.; Le Royer, C.; Hartmann, J. M.; Loup, V.; Besson, P.; Vandroux, L.; Campidelli, Y.; Deleonibus, S.; Boulanger, F. // Journal of Applied Physics;8/1/2007, Vol. 102 Issue 3, p034514 

    Capacitance-voltage (CV) measurements on germanium metal oxide semiconductor (MOS) structures show unusual frequency behavior compared to their silicon counterparts—a low-frequency behavior of the high-frequency CV characteristics is observed in the inversion regime, and the experimental...

  • Oxidation induced AlAs/GaAs superlattice disordering. Chang, J.C.P.; Kavanagh, K.L. // Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1235 

    Examines the occurrence of rapid interdiffusion at thin film interfaces. Diffusion of germanium and silicon after oxidation; Detection of negligible diffusion in forming gas; Correlation among dissociation, out-diffusion, and oxidation of the gallium arsenide substrates.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics