TITLE

Fabrication of Ge–Au film thermometers using interfacial atomic diffusion

AUTHOR(S)
Zhu, Da-Ming; Lin, Fengqi
PUB. DATE
September 1993
SOURCE
Review of Scientific Instruments;Sep93, Vol. 64 Issue 9, p2624
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We describe a new method which utilizes an interfacial atomic diffusion mechanism to fabricate Ge-Au film thermometers. The thermometers were made of multiple Ge/Au layers. In situ resistance measurements during the fabrication process indicate that Au and Ge atoms were diffused into neighboring layers. When the deposited Au layer thickness in a multilayer film is between 8 and 10 Ã…, the resistance of the film shows a power law behavior over a wide temperature range. As the Au layer thickness increases to beyond 10 Ã…, the resistance of the film becomes less sensitive to temperature. Both the temperature dependence and the magnitude of the film resistance are consistent with results obtained in Ge-Au alloys.
ACCESSION #
9787600

 

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