TITLE

Battery driven field data logger with static random-access memory storage

AUTHOR(S)
Ohsumi, Takashi
PUB. DATE
January 1985
SOURCE
Review of Scientific Instruments;Jan1985, Vol. 56 Issue 1, p163
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A data logger using static CMOS-type nonvolatile random-access memory (RAM) is described. Its compactness and low requirement of electric power allows outdoor use with battery operation for a period of more than 1 year. The device provides a low-cost strategy for field monitoring of the surface manifestation of volcanic activity or earthquake precursors.
ACCESSION #
9782733

 

Related Articles

  • Memory meets logic. Santoni, Andy // InfoWorld;12/09/96, Vol. 18 Issue 50, p24 

    Reports that International Business Machine researchers will describe at the 1996 International Electronic Devices Meeting a technique for combining high-speed logic and static memory. Embedding of static random access memory cells into a high-performance complementary metal oxide semiconductor...

  • New MEMS memory.  // R&D Magazine;Sep2007, Vol. 49 Issue 9, p60 

    This article reports tat a DRAM-like mechanical nonvolatile memory (NVM) that is fabricated using CMOS-compatible poly-Si surface micromachining has been reported at the Korea Advanced Institute of Science and Technology (KAIST), Daejeon. The NVM cell is composed of a MEMS switch and capacitor....

  • Low Power BiCMOS SRAM using 0.18μm Technology. Saini, Rajani; Kaur, Pawandeep // International Journal of Computer Applications;Jun2013, Vol. 72 Issue 1-23, p32 

    Rapid advances in the field of very large scale system designs brought memory circuits are continuously regulated and in turn, more number of cells could made possible to integrate on small chip. CMOS technology prove boon to memory circuits, which replaced the most of complex circuits to...

  • Region-Based Fractional Wavelet Transform Using Post Processing Artifact Reduction. Abdul-Jabbar, Jassim M.; Ahmed Taqi, Alyaa Q. // Iraqi Journal for Electrical & Electronic Engineering;2012, Vol. 8 Issue 1, p45 

    Wavelet-based algorithms are increasingly used in the source coding of remote sensing, satellite and other geospatial imagery. At the same time, wavelet-based coding applications are also increased in robust communication and network transmission of images. Although wireless multimedia sensors...

  • Countermeasures against NBTI degradation on 6T-SRAM cells. Glocker, E.; Schmitt-Landsiedel, D.; Drapatz, S. // Advances in Radio Science;2011, Vol. 9, p255 

    In current process technologies, NBTI (negative bias temperature instability) has the most severe aging effect on static random access memory (SRAM) cells. This degradation effect causes loss of stability. In this paper countermeasures against this hazard are presented and quantified via...

  • PERFORMANCE EVALUATION OF DIFFERENT SRAM CELL STRUCTURES AT DIFFERENT TECHNOLOGIES. Singh, Sapna; Arora, Neha; Suthar, Meenakshi; Gupta, Neha // International Journal of VLSI Design & Communication Systems;Feb2012, Vol. 3 Issue 1, p97 

    In recent years the demand for low power devices has been increases tremendously. To solve the power dissipation problem, many researchers have proposed different ideas from the device level to the architectural level and above. However, there is no universal way to avoid tradeoffs between...

  • 16MBIT SRAM CUTS SIZE IN HALF.  // Electronics Weekly;9/17/2003, Issue 2115, p27 

    Renesas Technology Corp. has a range of low power 16 Mbit SRAM with a chip size of approximately 32mm2. The small die size is achieved through combining an SRAM cell using a thin film transistor and a DRAM cell using a stacked capacitor. Dubbed Super SRAM, the memory cell is approximately half...

  • ST-coordinated Pullnano consortium pushes ahead with 32-, 22-nm CMOS. Mutschler, Ann Steffora // Electronic News;7/16/2007, Vol. 53 Issue 29, p23 

    The article reports that the European Commission-sponsored, and STMicroelectronics-managed project Pullnano is revealing the creation of a functional complementary metal oxide semiconductors (CMOS) static random access memory (SRAM) demonstrator built using 32-nanometer (nm) design rules, along...

  • MRAM can store and compute. Yeates, Harry // Electronics Weekly;10/29/2003, Issue 2121, p3 

    The article focuses on the use of a single magnetoresistive random-access memory (MRAM) cell with independent input lines to perform several logic functions. Among the advantages offered by the approach are non-volatile output and higher integration density. MRAM failed to reach process...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics