Design of an ultrahigh-vacuum specimen environment for high-resolution transmission electron microscopy

McDonald, M. L.; Gibson, J. M.; Unterwald, F. C.
April 1989
Review of Scientific Instruments;Apr89, Vol. 60 Issue 4, p700
Academic Journal
A JEOL 200CX high-resolution transmission electron microscope with point-to-point resolution of 2.5 Å has been modified to achieve an ultrahigh-vacuum specimen environment (∼ 10[sup -9]τ). In situ heating and evaporation are provided in the specimen viewing position, where high resolution can be maintained at temperatures exceeding 600°C. Our design employs complete differential pumping of the specimen chamber and the use of a He-cooled cyroshield at the specimen for best vacuum attainment. Our design philosophy permits the instruments to be used for a wide variety of in situ experiments, including low-pressure (< 10 ¹τ) gas reaction.


Related Articles

  • In situ study of the molecular beam epitaxy of CoSi2 on (111) Si by transmission electron microscopy and diffraction. Gibson, J. M.; Batstone, J. L.; Tung, R. T. // Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p45 

    The growth of CoSi2 has been studied by deposition and reaction of Co on clean Si (111) surfaces in situ in a modified ultrahigh vacuum transmission electron microscope. On deposition of nominally 20 Ã… Co at room temperature, strong interaction between Si and Co occurs yielding an epitaxial...

  • Thermal shock cleavage of silicon (111) thin crystals. Savage, T. S.; Xu, P.; Marks, L. D. // Journal of Applied Physics;2/1/1993, Vol. 73 Issue 3, p1039 

    Presents the results of pulsed laser damage of clean, thin samples of silicon (111) studied in an ultrahigh vacuum transmission electron microscope. Background to the study; Experimental method; Results.

  • Observation of dislocation-mediated layer-by-layer interface growth. Tong, X.; Gibson, J.M. // Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p168 

    Examines the growth of palladium silicide (Pd[sub 2]Si) thin films on silicon surfaces using in situ transmission electron microscope under ultrahigh vacuum conditions. Reaction of deposited Pd to Si at room temperature; Growth of films into strained islands at elevated temperatures; Cause of...

  • Development of a surface conductivity measurement system for ultrahigh vacuum transmission electron microscope. Minoda, H.; Hatano, K.; Yazawa, H. // Review of Scientific Instruments;Nov2009, Vol. 80 Issue 11, p113702 

    The surface conductivity measurement system using a micro-four-point probe (M4PP) had been developed for the ultrahigh vacuum transmission electron microscope (UHV-TEM). Since the current distribution in the sample crystals during the current voltage measurement by the M4PP is localized within...

  • Formation of iron silicide nano-islands on Si substrates by metal organic chemical vapor deposition under electron beams. Tanaka, M.; Chu, F.; Shimojo, M.; Takeguchi, M.; Mitsuishi, K.; Furuya, K. // Journal of Materials Science;May2006, Vol. 41 Issue 9, p2667 

    Electron-beam induced chemical vapor deposition (EBI-CVD) of Fe(CO)5 was performed on both Si (111) and (110) substrates at 673–873 K inside an ultrahigh vacuum transmission electron microscope. The formation of iron silicide islands was observed on both substrates. Cubic silicide...

  • Up and Down Atomic Steps. FEDINA, L. I.; LATYSHEV, A. V. // SCIENCE First Hand;2015, Vol. 40 Issue 1, p82 

    The article focuses on the surfaces of crystalline silicon taken from reflection electron microscope (REM). Topics discussed include steps in the image caused by crystallographic planes that have increased atomic density, creation of ultrahigh vacuum (UHV) around surface to observe atomic steps...

  • Sweden's Uppsala University and IBM jointly develop a...  // Physics Today;Jan97, Vol. 50 Issue 1, p7 

    Reports that Sweden's Uppsala University, along with IBM, have developed a rotary ultrahigh vacuum system for advanced corelevel spectroscopy. Benefits of the rotary system; Explanation offered by Professor Joachim Stohr, IBM Almaden Research Center; Design of the system by Jan-Olof Forsell, and...

  • How well can you manipulate your vacuum samples. Studt, Tim // R&D Magazine;June97, Vol. 39 Issue 7, p75 

    Looks at the problems faced in the manipulation of samples in ultrahigh vacuum (UHV) environments. Need for positioning systems with accuracy; Causes of various problems; Use of the micrometer. INSETS: Defining the problem.;A compendium of positioning system error sources.;More info..

  • Should your next UHV gauge run hot or cold? Comello, Vic // R&D Magazine;Nov97, Vol. 39 Issue 12, p65 

    Presents information on the ultrahigh vacuum hot-cathode and cold-cathode gauges. Indepth information on both gauges; What are the potential problems of the gauges; What are the advantages of the cold-cathode gauges.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics