Porous Low K Nearly Ready for Integration

May 2003
Electronic News;5/5/2003, Vol. 49 Issue 18, pN.PAG
Trade Publication
Reports on the availability of porous low k materials with dielectric constant of around 2.2 for early device integration efforts by the end of 2003, according to research & development consortium International Sematech. Progress made by the consortium concerning the materials in 2002; Capability of CVD low-k materials.


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