Simulation evidence for lateral excitation transfer in a self-assembled quantum-dot array

Johnson, H. T.; Bose, R.; Robinson, H. D.; Goldberg, B. B.
May 2003
Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3382
Academic Journal
Simulations of InAlAs/AlGaAs self-assembled quantum-dot arrays containing as many as 30 individual dots are used to identify a mechanism for lateral excitation transfer through partially delocalized heavy-hole states. Individual hole states exhibit wave-function splitting between several dots in the array, as well as partial confinement in the wetting layer, and have strong overlap with multiple conduction-band electron states in different quantum dots. Electron-hole pair energies involving these partially delocalized hole states correspond well with narrow resonances seen in the experimental photoluminescence excitation spectra taken for similar quantum-dot arrays using low-temperature near-field scanning optical microscopy.


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