TITLE

Analysis of thermal stress in wafer bonding of dissimilar materials for the introduction of an InP-based light emitter into a GaAs-based three-dimensional photonic crystal

AUTHOR(S)
Ogawa, Shinpei; Imada, Masahiro; Noda, Susumu
PUB. DATE
May 2003
SOURCE
Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3406
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thermal stresses generated by differences in the thermal expansion coefficients of InP and GaAs are analyzed in an attempt to introduce an InP-based light emitter into GaAs-based three-dimensional photonic crystal. Observations of the GaAs/InGaAsP bonding interface by scanning acoustic microscopy reveal that debonding occurs at approximately 300°C due to thermal stress. Calculations of thermal stress by a two-dimensional finite element method suggested that thermal stress could be reduced by thinning the substrate, which was confirmed experimentally. Using these results, a three-dimensional photonic crystal with light emitter was successfully fabricated.
ACCESSION #
9741861

 

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