TITLE

Midinfrared intersubband absorption in strain-compensated InGaP/InGaAs superlattices on (001) GaAs

AUTHOR(S)
Semtsiv, M. P.; Tarasov, G. G.; Masselink, W. T.; Kissel, H.; Woerner, M.
PUB. DATE
May 2003
SOURCE
Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3418
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Intersubband optical transitions in strain-compensated In[sub 0.32]Ga[sub 0.68]As-In[sub 0.32]Ga[sub 0.68]P superlattices grown using gas-source molecular-beam epitaxy on (001)GaAs are investigated by means of midinfrared absorption and low-temperature photoluminescence. Strong absorption corresponding to the transition from the first to second electronic subband is measured at wavelengths between 5.6 and 10.5 µm. The data indicate that the conduction band offset between the strained In[sub 0.3]2Ga[sub 0.68]As and the strained In[sub 0.32]Ga[sub 0.68]P is 370 meV and the electron effective mass in the strained In[sub 0.32]Ga[sub 0.68]As well is 0.060m[sub 0]. This material system is an interesting GaAs-based candidate for applications in midinfrared intersubband emitters and detectors.
ACCESSION #
9741857

 

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