Midinfrared intersubband absorption in strain-compensated InGaP/InGaAs superlattices on (001) GaAs

Semtsiv, M. P.; Tarasov, G. G.; Masselink, W. T.; Kissel, H.; Woerner, M.
May 2003
Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3418
Academic Journal
Intersubband optical transitions in strain-compensated In[sub 0.32]Ga[sub 0.68]As-In[sub 0.32]Ga[sub 0.68]P superlattices grown using gas-source molecular-beam epitaxy on (001)GaAs are investigated by means of midinfrared absorption and low-temperature photoluminescence. Strong absorption corresponding to the transition from the first to second electronic subband is measured at wavelengths between 5.6 and 10.5 µm. The data indicate that the conduction band offset between the strained In[sub 0.3]2Ga[sub 0.68]As and the strained In[sub 0.32]Ga[sub 0.68]P is 370 meV and the electron effective mass in the strained In[sub 0.32]Ga[sub 0.68]As well is 0.060m[sub 0]. This material system is an interesting GaAs-based candidate for applications in midinfrared intersubband emitters and detectors.


Related Articles

  • Comparison of Atomistic and Continuum Quantum-Dot Elastic Models and Implications for Optoelectronic Properties. Barettin, D.; Madsen, S.; Lassen, B.; Willatzen, M. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p445 

    A comparison between continuum and atomistic valence force field (VFF) strain models is presented for zincblende InGaAs/GaAs spherical quantum dots (QD), showing differences in the off-diagonal components of the strain tensor, relavant for optoelectronic properties. We also present a comparison...

  • Temperature dependence of electron mobility in (InAs)3(GaAs)1 superlattices. Matsui, Y.; Hayashi, H.; Yoshida, K. // Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1060 

    (InAs)3(GaAs)1 superlattices have been obtained successfully by the beam separation method of molecular beam epitaxy. The superlattice structure has been confirmed by lattice images and satellite spots of transmission electron microscopy. The electron mobilities of the superlattices are higher...

  • Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3–1.55 μm spectral range. Mamutin, V. V.; Bondarenko, O. V.; Egorov, A. Yu.; Kryzhanovskaya, N. V.; Shernyakov, Yu. M.; Ustinov, V. M. // Technical Physics Letters;Mar2006, Vol. 32 Issue 3, p229 

    We have studied the radiative properties of heterostructures comprising InAs/InGaAsN quantum wells in strain-compensated GaAsN/InGaAsN superlattices, which are intended for the active regions of lasers operating at 1.3–1.55 μm. Using such superlattices and additional InAs monolayer...

  • InP-based heterojunction bipolar transistors with InGaAs/GaAs strained-layer-superlattice. Driad, R.; Aidam, R.; Yang, Q.; Maier, M.; Güllich, H.; Schlechtweg, M.; Ambacher, O. // Applied Physics Letters;1/24/2011, Vol. 98 Issue 4, p043503 

    In this paper, we report the design, fabrication, and characterization of an InP/InGaAs heterojunction bipolar transistor (HBT) employing a lattice-mismatched In0.53Ga0.47As/GaAs strained-layer-superlattice (SLS) base structure. The performance of the SLS-base device is also compared with that...

  • Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis. Paulus, M. J.; Huang, C. I.; Bozada, C. A.; Cheney, M. E.; Dudley, S. C.; Stutz, C. E.; Evans, K. R.; Jones, R. L. // Journal of Applied Physics;11/1/1988, Vol. 64 Issue 9, p4765 

    Presents a study that investigated the characteristics of aluminum arsenide/gallium arsenide superlattice barriers using electrical barrier height analysis. Methodology; Determination of the superlattice barrier layer thickness; Comparison of the superlattice barrier of gallium arsenide and...

  • Temperature dependence of the electronic coherence of GaAs-GaAlAs superlattices. Mendez, E. E.; Agulló-Rueda, F.; Hong, J. M. // Applied Physics Letters;6/18/1990, Vol. 56 Issue 25, p2545 

    We have shown that the coherence length of electrons in a 55-Å-period GaAs-GaAlAs superlattice does not depend strongly on temperature in the range 5–292 K, varying from 17 periods at 5 K to a minimum of nine periods at room temperature. The quantum coherence was determined by...

  • Wannier–Stark localization in a strained InGaAs/GaAs superlattice. Pezeshki, B.; Thomas, D.; Harris, J. S. // Applied Physics Letters;11/12/1990, Vol. 57 Issue 20, p2116 

    We report the first room-temperature observation of Wannier–Stark localization in a strained InGaAs/GaAs superlattice. The localization effects are in close agreement to theory. At low electric fields, the room-temperature absorption data show a small Wannier exciton peak at the lower...

  • Strain and defect generation during interdiffusion of GaAs into Al[sub 0.5]In[sub 0.5]P. Thornton, R.L.; Ponce, F.A.; Anderson, G.B.; Endicott, F.J. // Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2060 

    Investigates the interdiffusion of GaAs strain and defect generation into Al[sub 0.5]In[sub 0.5]P. Introduction of substantial defect producing strain; Application of critical thickness analysis to interdiffused structures; Enhancement of interdiffusion through silicon diffusion.

  • Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy. Tsyrlin, G. �.; Petrov, V. N.; Masalov, S. A.; Golubok, A. O. // Semiconductors;Jun99, Vol. 33 Issue 6, p677 

    The experimental results of RHEED and scanning tunneling microscopy investigations of multilayer structures of InGaAs/GaAs quantum dots, obtained by submonolayer epitaxy on singular and vicinal GaAS (100) substrates, are reported. The results presented show that spatial ordering of nano-objects...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics