Compositionally-tuned epitaxial cubic Mg[sub x]Zn[sub 1-x]O on Si(100) for deep ultraviolet photodetectors

Yang, W.; Hullavarad, S. S.; Nagaraj, B.; Takeuchi, I.; Sharma, R. P.; Venkatesan, T.; Vispute, R. D.; Shen, H.
May 2003
Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3424
Academic Journal
We report on the epitaxial growth of wide-band-gap cubic-phase Mg[sub x]Zn[sub 1 - x]O thin films on Si(100) by pulsed-laser deposition and fabrication of oxide-semiconductor-based ultraviolet photodetectors. The challenges of large lattice and thermal expansion mismatch between Si and Mg[sub x]Zn[sub 1 - x]O have been overcome by using a thin SrTiO[sub 3] buffer layer. The heteroepitaxy of cubic-phase Mg[sub x]Zn[sub 1 - x]O on Si was established with epitaxial relationship of Mg[sub x]Zn[sub 1 - x]O( 100)//SrTiO[sub 3] ( 100)//Si(100) and Mg[sub x]Zn[sub 1 - x]O[100]//SrTiO[sub 3][100]//Si[110]. The minimum yield of the Rutherford backscattering ion channeling in Mg[sub x]Zn[sub 1 - x]O layer was only 4%, indicating good crystalline quality of the film. Smooth surface morphology with rms roughness of 0.6 nm was observed using atomic force microscopy. Photodetectors fabricated on Mg[sub 0.68]Zn[sub 0.32]O/SrTiO[sub 3]/Si show peak photoresponse at 225 nm, which is in the deep UV region.


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