Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

Oila, J.; Kivioja, J.; Ranki, V.; Saarinen, K.; Look, D. C.; Molnar, R. J.; Park, S. S.; Lee, S. K.; Han, J. Y.
May 2003
Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3433
Academic Journal
Positron annihilation measurements reveal show that negative Ga vacancies are the dominant acceptors in n-type gallium nitride grown by hydride vapor phase epitaxy. The concentration of Ga vacancies decreases, from more than 10[sup 19] to below 10[sup 16] cm[sup -3], as the distance from the interface region increases from 1 to 300 µm. These concentrations are the same as the total acceptor densities determined in Hall experiments. The depth profile of O is similar to that of VGa, suggesting that the Ga vacancies are complexed with the oxygen impurities.


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