Effect of Al[sub 2]O[sub 3] capping layer on suppression of interfacial SiO[sub 2] growth in HfO[sub 2]/ultrathin SiO[sub 2]/Si(001) structure

Kundu, Manisha; Miyata, Noriyuki; Nabatame, Toshihide; Horikawa, Tsuyoshi; Ichikawa, Masakazu; Toriumi, Akira
May 2003
Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3442
Academic Journal
We investigated the effect a 1.2-nm-thick Al[sub 2]O[sub 3] capping layer had on suppressing interfacial Si oxidation in a 2.6-nm-HfO[sub 2]/0.35-nm-SiO[sub 2]/Si(001) structure during postdeposition annealing in an oxygen ambient. An incubation period (IP) was initially observed during which the HfO[sub 2]/Si interface exhibited remarkable stability without any interfacial SiO[sub 2] growth. This was then followed by very slow interface oxidation. Our detailed study suggested that low oxidant diffusion through the capping layer determined the effective IP. Furthermore, HfO[sub 2]/Si interface oxidation, which proceeded through a two-step process that was similar to an uncapped structure, was severely constrained by the limited availability of oxygen at the A1[sub 2]O[sub 3]/HfO[sub 2] interface.


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