Pulsed-laser-deposited ultraviolet-emitting SrS:Te thin films

Fitz-Gerald, J. M.; Hoekstra, J.; Rack, P. D.; Fowlkes, J. D.
May 2003
Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3466
Academic Journal
SrS has an indirect band gap of ∼4.32 eV, however, when it is doped with tellurium, ultraviolet emission occurs at 360 nm and 400 nm due to recombination from bound exciton states. In this letter, we discuss the ultraviolet emission of pulsed-laser-deposited thin films of SrS:Te grown at room temperature on Si. The deposited film thickness ranged from 0.1-1.5 µm, with optimized films grown at ∼0.5 µm. Te doping was incorporated by both ion implantation and conventional diffusion of deposited Te films. The characteristics of the ultraviolet emission will be discussed and correlated to the microstructural, chemical, and optical properties of the films. Institute of Physics. [DOI: 10.1063/1.


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