Atomic-layer doping in Si by alternately supplied NH[sub 3] and SiH[sub 4]

Jeong, Youngcheon; Sakuraba, Masao; Murota, Junichi
May 2003
Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3472
Academic Journal
Low-temperature Si growth on the atomic-layer order nitrided Si(100) surface with N amount of 1-6×10[sup 14] cm[sup -2] formed by NH[sub 3] reaction at 400°C were investigated using an ultraclean low-pressure chemical vapor deposition system. The epitaxial growth of Si film on the nitrided Si(100) with the initial N amount as high as about 3 × 10[sup 14] cm[sup -2] is realized at 500 °C, although the film becomes amorphous in the case at the initial surface N amount of 6 × 10[sup 14] cm[sup -2]. By the analysis of the x-ray photoelectron spectroscopy, it is observed that the surface structure of the atomic-layer order nitrided Si(100) is changed into Si[sub 3]N[sub 4] structure by the increase of the surface N amount. It is suggested that the crystallinity of Si film deposited on the atomic-layer order nitrided Si(100) is degraded by the existence of Si[sub 3]N[sub 4] structure. Depth profile of N atomic-layer doped Si film clearly shows that most of the N atoms are confined within about 1-nm-thick region.


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