Ferroelectric behavior of orientation-controlled PbBi[sub 4]Ti[sub 4]O[sub 15] thin films

Xianyu, Wen Xu; Lee, Wan In; Ko, Taegyung; Lee, June Key
May 2003
Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3496
Academic Journal
Ferroelectric lead bismuth titanate (PbBi[sub 4]Ti[sub 4]O[sub 15]) thin films, selectively controlled in c-axis and off-c-axis orientation, were fabricated on a Pt layer by a chemical solution deposition method. The off-c-axis oriented PbBi[sub 4]Ti[sub 4]O[sub 15] films demonstrated much higher remanent polarization (8.7 µC/cm²) than those of c-axis oriented films (3.7 µC/cm²). Regardless of grain orientation, PbBi[sub 4]Ti[sub 4]O[sub 15] films were not fatigued up to 10[sup 10] cycles under 9-V application. It is deduced that the role of Bi[sub 2]O[sub 2, sup 2+] layer in inducing fatigue-free property for this Bi-layered perovskite structure is the self-regulation of space charge.


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