Diamond-like carbon nanocomposite films

Chen, Liang-Yih; Chau-Nan Hong, Franklin
May 2003
Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3526
Academic Journal
Diamond-like carbon (DLC) nanocomposite films were deposited at room temperature by inductively coupled plasma chemical vapor deposition using hexamethyldisilane (HMDS), hexamethyldisilazane (HMDSN), and hexamethyldisiloxane (HMDSO) precursors. High-resolution transmission electron microscopy showed that all the films contained nanoparticles. The DLC nanocomposite films deposited by HMDS contained hollow spherical nanocrystallites, called nanoballs, of hexagonal silicon carbide. The nanocomposite films deposited by HMDSN contained crystalline Si[sub 3]N[sub 4] nanoparticles. The nanocomposite films deposited by HMDSO contained amorphous SiO[sub x] nanoparticles. Although both types of films had similar hardness, the DLC nanocomposite films exhibited much lower compressive stresses than the DLC films deposited by methane, i.e., 1.5 vs 11 GPa, respectively. Through the enhancement of gas phase reactions, the inductively coupled plasma should be responsible for the formation of nanoparticles in the nanocomposite films.


Related Articles

  • Metallic point contacts formed by physical vapor deposition and chemical vapor deposition:... Gribov, N.N.; Caro, J. // Low Temperature Physics;Jul97, Vol. 23 Issue 7, p554 

    Describes an electron-microscopy study of nanoholes in membranes in successive stages of metal deposition using two different techniques, physical vapor deposition (PVD) and chemical vapor deposition. Relevance of one-sided PVD for heterocontacts; Observation of good quality point-contact...

  • High density plasma processing of nanostructured diamond films on metals. Catledge, Shane A.; Vohra, Yogesh K. // Journal of Applied Physics;12/1/1998, Vol. 84 Issue 11, p6469 

    Reports on a regime for synthesis of nanostructured diamond films on Titanium (Ti)-6Aluminum (Al)-4V alloy and molybdenum substrates using microwave plasma chemical vapor deposition (CVD). Composition of the films; Contrast to standard CVD conditions; Comparison with conventionally processed...

  • Structure of carbon nanotubes grown by microwave-plasma-enhanced chemical vapor deposition. Okai, M.; Muneyoshi, T.; Yaguchi, T.; Sasaki, S. // Applied Physics Letters;11/20/2000, Vol. 77 Issue 21 

    Carbon nanotubes grown on a Ni substrate and an Fe-Ni-Cr alloy substrate by plasma-enhanced chemical vapor deposition were investigated by transmission electron microscope (TEM) and energy dispersive x-ray (EDX) analysis. TEM showed that the nanotubes on both substrates have a piled-cone...

  • Synthesis of large area aligned carbon nanotube arrays from C[sub 2]H[sub 2]–H[sub 2] mixture by rf plasma-enhanced chemical vapor deposition. Wang, Y. H.; Lin, J.; Huan, C. H. A.; Chen, G. S. // Applied Physics Letters;7/30/2001, Vol. 79 Issue 5 

    Large area aligned carbon nanotube (CNT) arrays have been successfully synthesized from C[sub 2]H[sub 2] and H[sub 2] mixture by rf plasma-enhanced chemical vapor deposition (without hot filament) on iron-coated silicon substrates. H[sub 2] plasma (not H[sub 2] gas) was confirmed to play the...

  • Growth of aligned carbon nanotubes by plasma-enhanced chemical vapor deposition: Optimization of growth parameters. Tanemura, M.; Iwata, K.; Takahashi, K.; Fujimoto, Y.; Okuyama, F.; Sugie, H.; Filip, V. // Journal of Applied Physics;8/1/2001, Vol. 90 Issue 3 

    Direct-current plasma-enhanced chemical vapor deposition (CVD) with mixtures of acetylene and ammonia was optimized to synthesize aligned carbon nanotubes (CNTs) on Co- or Ni-covered W wires with regard to wire temperature, wire diameter, gas pressure, and sample bias. A phase diagram of CNT...

  • For DRAM and logic: CVD low-k dielectric integration. Buchanan, Keith // Solid State Technology;Jun2002, Vol. 45 Issue 6, p59 

    Describes the issues associated with the integration of chemical vapor deposition (CVD) low-k dielectrics for 100 nanometer technology node applications. Properties of low-k flowfill dielectric; Factors that determine the successful integration of low-k dielectrics into advanced dynamic random...

  • Effect of gas pressure on the growth and structure of carbon nanotubes by chemical vapor deposition. Li, W.Z.; Wen, J.G.; Tu, Y.; Ren, Z.F. // Applied Physics A: Materials Science & Processing;2001, Vol. 73 Issue 2, p259 

    The effect of gas pressure on the structure of carbon nanotubes (CNTs) has been systematically investigated in the chemical vapor deposition process. The yield of CNTs (defined as the weight ratio of CNTs vs. catalyst) increases significantly with the gas pressure, reaches 600% at 600 Torr, then...

  • GaN nanotweezers. Li, Z.J.; Chen, X.L.; Dai, L.; Li, H.J.; Liu, H.W.; Gao, H.J.; Xu, Y.P. // Applied Physics A: Materials Science & Processing;2003, Vol. 76 Issue 1, p115 

    A new form of GaN nanomaterial (nanotweezers) has been obtained by chemical vapor deposition on an etched cubic MgO (100) plane. The nanotweezers consist of a bottom rod and two arms. The bottom rods have diameters of about 100�150 nm and lengths of about 200�500 nm, on which two arms...

  • CN[sub x]/carbon nanotube junctions synthesized by microwave chemical vapor deposition. Ma, Xucun; Wang, E. G. // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p978 

    The CN[sub x]/carbon nanotube junctions were successfully synthesized by microwave plasma-assisted chemical vapor deposition method from the mixture of N[sub 2]/CH[sub 4] and H[sub 2]/CH[sub 4] gases in a continuous growth process. High resolution transmission electron microscopy revealed that...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics