Integrated piezoresistive sensors for atomic force-guided scanning Hall probe microscopy

Brook, A. J.; Bending, S. J.; Pinto, J.; Oral, A.; Ritchie, D.; Beere, H.; Henini, M.; Springthorpe, A.
May 2003
Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3538
Academic Journal
We report the development of an advanced sensor for atomic force-guided scanning Hall probe microscopy whereby both a high mobility heterostructure Hall effect magnetic sensor and an n-Al[sub 0.4]Ga[sub 0.6]As piezoresistive displacement sensor have been integrated in a single III-V semiconductor cantilever. This allows simple operation in high-vacuum/variable-temperature environments and enables very high magnetic and topographic resolution to be achieved simultaneously. Scans of magnetic induction and topography of a number of samples are presented to illustrate the sensor performance at 300 and 77 K.


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