Observation of magnetic-field-enhanced source current of accumulated p-channel metal-oxide-semiconductor field-effect transistors

Baron, F. A.; Zhang, Y.; Wang, K. L.
May 2003
Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3547
Academic Journal
Gate-induced drain leakage current in accumulated metal-oxide-semiconductor field-effect transistors is pumped out completely by the body, while the source current should be zero due to the barrier of the p/n junction between the source and the accumulated channel. In this work, we report the observation of the current peaks in the source current versus gate voltage characteristics of p-channel transistors when the devices are biased at the accumulation regime. The source current vanishes when the temperature exceeds 11 K. The source current can be enhanced dramatically as the transistors are exposed to a high magnetic field perpendicular to the channel. We believe the Fermi-edge singularity may be responsible for the resonant source current peaks.


Related Articles

  • MOSFET switch provides efficient ac/dc conversion. Pephany, Spehro; Travis, Bill // EDN;02/17/2000, Vol. 45 Issue 4, p149 

    Reports on the benefits in the use of metal oxide semiconductor field-effect transistor switches in AC/DC conversion. Drawing of current to the level of 12V DC; Rectification of the 18V AC signal; Maintenance of gate voltage at 12V.

  • Observation of double peak in the substrate current versus gate voltage characteristics of n-channel metal-oxide-semiconductor field effect transistors. Anil, K. G.; Eisele, I.; Mahapatra, S. // Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2238 

    By employing sensitive current measurements at low drain voltages for n-channel metal-oxide-semiconductor field effect transistors with different channel dopings, substrate current versus gate voltage characteristics with two peaks were obtained for devices with low channel doping at 77 K. This...

  • MOSFET selection is key to successful DC-DC conversion. McDaniel // Electronic Design;12/06/99, Vol. 47 Issue 25, p158 

    Focuses on how the proper choice of metal oxide semiconductor field-effect transistor is a key parameter in the design of direct current (DC)-DC conversion. Variation in formulas provided by manufacturers for efficiency calculation in DC-DC converters; Technique of breaking down the losses into...

  • Predictive Control Maximizes Synchronous Rectifier Efficiency. Mappus, Steve // Power Electronics Technology;May2003, Vol. 29 Issue 5, p44 

    Focuses on Predictive Gate Drive technology, a digital control-driven technique that optimizes metal oxide semiconductor field effect transistor turn-on and turn-off delays in synchronous rectifiers. Technologies used to minimize cross-conduction in synchronous rectifiers; Efficiency comparison...

  • Synchronous Rectifier Module Eyes Isolated Supplies. Bindra, Ashok // Power Electronics Technology;Jul2003, Vol. 29 Issue 7, p56 

    Discusses the development and applications of synchronous rectifier module on high performance voltage regulator modules. Prevention of cross conduction and reduction of conduction in metal oxide semiconductor field-effect transistors; Efficiency demands of the direct current-to- direct current...

  • MOSFET Packaging Boosts Current Density. Blake, Carl; Scheulein, George // Power Electronics Technology;May2004, Vol. 30 Issue 5, p24 

    Discusses the role of metal oxide semiconductor field-effect transistors in boosting current density. Applicability on direct current (dc)-dc power applications; Capacity to enable system designers to take advantage of the newest from factor for desktop computers; Improvement of thermal system...

  • Dual Buck Regulator Allows Flexible Load Shoring. Morrison, David // Power Electronics Technology;Jul2006, Vol. 32 Issue 7, p54 

    The article features the ISL65426 model from Intersil in the U.S. The technology is a synchronous converter integrated circuit merging with the metal oxide semiconductor field-effect transistors that generates two output electric potentials. Furthermore, the device has two master power blocks...

  • Rectifiers & Power Conversion ICs.  // ECN: Electronic Component News;Oct2002, Vol. 46 Issue 11, p52 

    Features various rectifiers and power conversion integrated circuits. Intersil Corp.'s metal oxide semiconductor field-effect transistors (MOSFET) drivers models Endura ISL6206 and ISL6207; MOSFET in mini power packages from Royal Philips Electronics; International Rectifier's 60 A Schottky diodes.

  • Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral. Murray, Hugues; Martin, Patrick; Bardy, Serge // Active & Passive Electronic Components;2010, Special section p1 

    We propose a simple model, derived from Pao-Sah theory, valid in all modes from weak to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The Pao-Sah double integral is decomposed into single integrals with limits of integration...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics