TITLE

Improvement of n-GaN Schottky diode rectifying characteristics using KOH etching

AUTHOR(S)
Spradlin, J.; Dogan, S.; Mikkelson, M.; Huang, D.; He, L.; Johnstone, D.; Morkoç, H.; Molnar, R. J.
PUB. DATE
May 2003
SOURCE
Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3556
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
KOH etch was investigated as a means to improve the I-V characteristics of Schottky diodes on n-type GaN grown by molecular-beam epitaxy on sapphire, or on hydride vapor phase epitaxy templates. Atomic force microscopy images and I-V characteristics are presented. After etching as-grown films in molten KOH, Schottky diodes on c-plane GaN had orders of magnitude reduction in reverse leakage current. The best devices had leakage currents less than 10[sup -12] A (10[sup -8] A/cm²) at -5 V, and ideality factors of 1.04. Measurements on several different sample structures indicate a correlation between surface roughness and saturation current, and an improvement in ideality factor when etched in KOH. Phosphoric acid was also investigated, but did not result in significant improvements in I-V characteristics.
ACCESSION #
9741811

 

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