Study the Electrical Performance of Carbon Nanotube Field Effect transistor (CNTFET) with mixed I-V characteristics

Ghaffar, Adnan; Wang Yong shun; Abbas, Asad
July 2014
Australian Journal of Basic & Applied Sciences;Jul2014, Vol. 8 Issue 10, p12
Academic Journal
The I-V characteristics of carbon nanotube field effect transistor (CNTFET) are explored. As the CNFET is a new transistor that can create the tremendous progress in the field of nano electronics and integrated circuits design due to its excellent electrical properties. This device can overcome the limitations that were found in the Si MOSFET.It performance of carbon nanotube depend on the gate insulator thickness and the length of carbon nanotube. So in this paper, we simulate the structure, operation and the I-V characteristics like output characteristics, mobile charge, quantum capacitance, insulator capacitance, average velocity and qm/id ratio by changing the values of nanotube diameter and gate insulator thickness in detail.


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