On the picosecond switching of a high-density current (60 kA/cm) via a Si closing switch based on a superfast ionization front

Gusev, A.; Lyubutin, S.; Rukin, S.; Slovikovsky, B.; Tsyranov, S.
August 2014
Semiconductors;Aug2014, Vol. 48 Issue 8, p1067
Academic Journal
A silicon closing switch with successive breakdown mode of diode structures based on a superfast ionization front is studied. In a coaxial line with a 48-Ω wave impedance, pulses with an amplitude above 100 kV and a rise time of 40 ps at an amplitude level of 0.3-0.9 are obtained. The maximum output-voltage rise rate is 2 MV/ns at a switching-current peak density of 60 kA/cm. Numerical simulation shows that the switching time of individual structures of the device is 7-15 ps at a reverse-voltage rise rate of >100 kV/ns per structure under experimental conditions. The electric field in the p- n junction reaches the Zener breakdown threshold (∼10 V/cm) even in the case where the diode structure contains process-induced deep-level centers with concentrations of up to 10 cm.


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