TITLE

Step bunching mechanism in chemical vapor deposition of 6H-and 4H-SiC{0001}

AUTHOR(S)
Kimoto, Tsunenobu; Itoh, Akira
PUB. DATE
April 1997
SOURCE
Journal of Applied Physics;4/15/1997, Vol. 81 Issue 8, p3494
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates step bunching in chemical vapor deposition of 6H- and 4H-SiC on off-oriented {0001} faces with cross-sectional transmission electron microscopy. Control of incorporation of N, Al, and B impurities by changing the C/Si ratio during CVD growth; Step bunching mechanism; Multiple-step height's agreement with the unit cell of SiC.
ACCESSION #
9712170770

 

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