Step bunching mechanism in chemical vapor deposition of 6H-and 4H-SiC{0001}

Kimoto, Tsunenobu; Itoh, Akira
April 1997
Journal of Applied Physics;4/15/1997, Vol. 81 Issue 8, p3494
Academic Journal
Investigates step bunching in chemical vapor deposition of 6H- and 4H-SiC on off-oriented {0001} faces with cross-sectional transmission electron microscopy. Control of incorporation of N, Al, and B impurities by changing the C/Si ratio during CVD growth; Step bunching mechanism; Multiple-step height's agreement with the unit cell of SiC.


Related Articles

  • Relaxed Ge[sub x] Si[sub 1-x] layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition. Luo, G.L.; Chen, P.Y.; Lin, X.F.; Tsien, P.; Fan, T.W. // Applied Physics A: Materials Science & Processing;2000, Vol. 70 Issue 4, p449 

    Abstract. A new alternative method to grow the relaxed Ge[sub 0.24]Si[sub 0.76] layer with a reduced dislocation density by ultrahigh vacuum chemical vapor deposition is reported in this paper. A 1000-A Ge[sub 0.24]Si[sub 0.76] layer was first grown on a Si(100) substrate. Then a 500-A Si layer...

  • Electron energy-loss spectroscopy study of a multilayered SiOx and SiOxCy film prepared by plasma-enhanced chemical vapor deposition. Zhang, Zaoli; Wagner, Thomas; Sigle, Wilfried; Schulz, Andreas // Journal of Materials Research;Mar2006, Vol. 21 Issue 3, p9 

    A multilayered structure of SiOx and SiOxCy on silicon substrate was prepared by plasma-enhanced chemical vapor deposition from gas mixtures of hexamethyldisiloxane and oxygen. Scanning transmission electron microscopy studies showed that the structure is well defined with distinct layers. The...

  • The influence of diluent gas composition and temperature on SiC nanopowder formation by CVD. Gupta, Aparna; Ghosh, Tridib; Jacob, Chacko // Journal of Materials Science;Jul2007, Vol. 42 Issue 13, p5142 

    Crystalline cubic silicon carbide (3C-SiC) nanopowders were synthesized using hexamethyldisilane (HMDS) in a resistance heated chemical vapour deposition (CVD) reactor. The effects of different diluent gases on the synthesis of the SiC powder were also studied. The deposited powder was...

  • Prevention of micropipes and voids at β-SiC/Si(100) interfaces. Scholz, R.; Gösele, U.; Wischmeyer, F.; Niemann, E. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 1, p59 

    Abstract. Chemical vapor deposition (CVD) carbonization experiments were carried out on (100) silicon substrates. Scanning and transmission electron microscopy (SEM and TEM) were used to detect and characterize the interlace defects. Conditions for preventing the formation of micropipes and...

  • Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films. Hatalis, Miltiadis K.; Greve, David W. // Journal of Applied Physics;4/1/1988, Vol. 63 Issue 7, p2260 

    Presents a study which examined the crystallization of undoped amorphous silicon films deposited by low-pressure chemical vapor deposition in the temperature range 580 degrees Celsius and annealed from 550 to 950 degrees Celsius using transmission electron microscopy. Nucleation rate of grains...

  • Carbonization-induced SiC micropipe formation in crystalline Si. Scholz, R.; Gosele, U. // Applied Physics Letters;9/4/1995, Vol. 67 Issue 10, p1453 

    Reports the investigation by transmission electron microscopy (TEM) of defect structure of silicon substrates at their B-SiC/Si interfaces generated in a chemical vapor deposition process by carbonization. Use of cross section and planar specimens; Introduction of the two-step CVD method;...

  • Atomic structure and electronic properties of c-Si/a-Si:H heterointerfaces. Yanfa Yan; Page, M.; Wang, T. H.; Al-Jassim, M. M.; Branz, Howard M.; Qi Wang // Applied Physics Letters;3/20/2006, Vol. 88 Issue 12, p121925 

    The atomic structure and electronic properties of crystalline-amorphous interfaces in silicon heterojunction solar cells are investigated by high-resolution transmission electron microscopy, atomic-resolution Z-contrast imaging, and electron energy-loss spectroscopy. With these combined...

  • Synthesis of High-Density Vertically Aligned Carbon Nanotubes Using Ultrasonic Nebulizer. Jianhui Zhang; Wei Li; Soga, Tetsuo; Jimbo, Takashi; Tanji, Takayoshi // Materials Sciences & Applications;Apr2012, Vol. 3 Issue 4, p213 

    Vertically aligned carbon nanotubes (VACNTs) array with high density have been synthesized from a mixture of ferrocene and ethanol using ultrasonic nebulizer techniques. Using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) as well as Raman spectroscopy,...

  • Significant improvement in silicon chemical vapor deposition epitaxy above the surface dehydrogenation temperature. Wang, Qi; Teplin, Charles W.; Stradins, Paul; To, Bobby; Jones, Kim M.; Branz, Howard M. // Journal of Applied Physics;11/1/2006, Vol. 100 Issue 9, p093520 

    We observe an order of magnitude increase in both the rate and achievable thickness of epitaxy by hot-wire chemical vapor deposition at temperatures above the dehydrogenation temperature of the silicon surface. We deposit silicon films on (100) silicon at 110 nm/min at substrate temperatures...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics