Persistent Photoconductivity in AlGaN/GaN Heterojunction Channels Caused by the Ionization of Deep Levels in the AlGaN Barrier Layer

Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Kachi, T.; Sugimoto, M.; Sakaki, H.
December 2013
AIP Conference Proceedings;Dec2013, Vol. 1566 Issue 1, p81
Academic Journal
Time-dependent responses of drain current (Id) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances Id by about 10 %, indicating that the density of two-dimensional electrons is raised by about 1012 cm-2. When UV light is turned off at 300 K, a part of increased Id decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of Id at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.


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