TITLE

Transistor sales continue to rise

AUTHOR(S)
SS
PUB. DATE
August 1997
SOURCE
Electronic Design;08/04/97, Vol. 45 Issue 16, p64F
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
Reports that there was an increase in transistor sales during the first five months of 1997. Reference to inforamtion from the RETMA.
ACCESSION #
9708283438

 

Related Articles

  • U-H-F transistor.  // Electronic Design;10/25/94, Vol. 42 Issue 22, p8 

    Presents an excerpt from an article in the October 1954 issue of `Electronic Design' magazine about the `p-n-i-p' transistor developed by Bell Telephone Laboratories. Transistor design.

  • Power packages pack large dice in standard housing.  // EDN;8/15/96 Supplement Literature Link, Vol. 41 Issue 17, pLL6 

    Introduces the Max220 package from SGS-Thomson. Comparisons with TO-220 package; Advantage of using the Max220 package.

  • Nanometer-scale transistor. Free, John; Barnes-Svarney, Patricia // Popular Science;Oct92, Vol. 241 Issue 4, p43 

    States that Clive Reeves and colleagues at IBM's Thomas J. Watson Research Center in Yorktown Heights, New York claim to have developed the world's smallest transistor. Research and development details; Size limitation for transistors.

  • Transistor has golden anniversary.  // Test & Measurement World;Dec97, Vol. 17 Issue 13, p4 

    Commemorates the fiftieth anniversary of the invention of the transistor on December 1947. History on the invention of the transistor.

  • 40 years ago in electronic design. Sciannamea, Mike; schiff, Debra // Electronic Design;07/21/97, Vol. 45 Issue 15, p48F 

    Editorial. Presents information on transistors. How they threaten the existence of vacuum tubes; How tubes are taking the lead; Information on transistor heat barriers.

  • Bell resizes transistor market.  // Seybold Report on Internet Publishing;Dec97, Vol. 2 Issue 4, p27 

    Announces the development of the world's smallest practical transistor by Bell Laboratories. Capabilities; Other Lucent Technologies' products that will benefit from the advancement.

  • 77 K single electron transistor fabricated with 0.1 micro m technology. Altmeyer, S.; Hamidi, A. // Journal of Applied Physics;6/15/1997, Vol. 81 Issue 12, p8118 

    Discusses metal based single electron transistors fabricated by the step edge cut off process. Deposition of titanium metal lines on prepatterned silicon substrates serving as dielectric barriers for the tunnel junctions; Observed clear Coulomb blockade and Coulomb oscillation features in...

  • Dependence of gate control on the aspect ratio in metal/metal-oxide/metal tunnel transistors. Buot, F.A.; Rendell, R.W.; Snow, E.S.; Campbell, P.M.; Park, D.; Marrian, C.R.K.; Mango, R. // Journal of Applied Physics;7/15/1998, Vol. 84 Issue 2, p1133 

    Studies the dependence of gate control on the aspects ratio in metal/metal-oxide/metal tunnel transistors. Description of gate control in metal-oxide tunneling transistor; Characteristics of metal-oxide tunneling transistor (MOTT).

  • 298 K operation of Nb/Nb oxide-based single-electron transistors with reduced size of tunnel... Shirakashi, Jun-ichi; Matsumoto, Kazuhiko; Miura, Naruhisa; Konagai, Makoto // Journal of Applied Physics;5/15/1998, Vol. 83 Issue 10, p5567 

    Provides information on an experiment which investigated the operation of Nb/Nb oxide-based single-electron transistors at room temperature. Methodology used to conduct the experiment; Initial charging energy of the device; What caused the tunnel junctions to shrink; Results of the experiment.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics