TITLE

Intensity and spatial modulation of spontaneous emission in GaAs by field aperture selecting transport

AUTHOR(S)
Boone, Thomas D.; Tsukamoto, Hironori; Woodall, Jerry M.
PUB. DATE
May 2003
SOURCE
Applied Physics Letters;5/12/2003, Vol. 82 Issue 19, p3197
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A potential technique for modulating the light emission resulting from excess minority carrier recombination in a semiconductor device is introduced. This process utilizes an electric field to transport a packet of minority carriers past an optical output aperture defined on the surface of the semiconductor. A short burst of light is allowed to escape through the surface of the device as the packet drifts past the opening in the aperture. To first order, the temporal length of the optical pulse will be a function of the width of the excess minority carrier packet, the width of the aperture, and the drift velocity of the excess minority carriers. In p-type gallium arsenide, geometric scales of 5 μm should make possible pulse widths near 100 ps. Initial experimental results are presented confirming the spatial displacement and the attenuation of the external luminescence intensity as a function of applied bias voltage.
ACCESSION #
9697749

 

Related Articles

  • Capture of photoexcited carriers by a laser structure. Deveaud, B.; Clérot, F.; Regreny, A.; Fujiwara, K.; Mitsunaga, K.; Ohta, J. // Applied Physics Letters;12/18/1989, Vol. 55 Issue 25, p2646 

    The capture of photoexcited carriers in different laser structures is investigated by subpicosecond luminescence spectroscopy. The capture time at 20 and 80 K is monitored by the decay of the luminescence of the confinement layers. It is found to range between 2 and 3 ps for both linear and...

  • Impact excitation in ZnS-type electroluminescence. Bringuier, E. // Journal of Applied Physics;10/15/1991, Vol. 70 Issue 8, p4505 

    Presents a study that proposed a model for the impact excitation of luminescence centers in insulating layers under a high electric field, zinc sulphide-type electroluminescence. Descriptions of high-field electronic transport in wide-gap semiconductors and the lucky-drift model; Calculation of...

  • Influence of an electric field and a high excitation density on the luminescence of epitaxial GaN films. Yakobson, M. A.; Nel’son, D. K.; Kalinina, E. V. // Physics of the Solid State;May98, Vol. 40 Issue 5, p862 

    The influence on the recombination luminescence spectra of a field applied to the Schottky barrier and a high excitation density GaN epitaxial films grown by metalorganic chemical-vapor deposition (MOCVD) is investigated. It is discovered that quenching of the luminescence takes place under a...

  • Highly resistive p-PbTe films with carrier concentration as low as 1014 cm-3. Sandomirsky, V.; Butenko, A.V.; Kolobov, I.G.; Ronen, A.; Schlesinger, Y.; Sipatov, A.Yu.; Volubuev, V.V. // Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3732 

    We propose here a model according to which a high density of semiconductor-insulator interface states can deplete practically the whole film volume, provided that the film thickness is of the order of Debye screening length. We demonstrated this experimentally by showing that thin p-PbTe films,...

  • Terahertz Electroluminescence Originating from Spatially Indirect Intersubband Transitions in a GaAs/AlGaAs Quantum-Cascade Structure. Glinskiı, G. F.; Andrianov, A. V.; Sreseli, O. M.; Zinov'ev, N. N. // Semiconductors;Oct2005, Vol. 39 Issue 10, p1182 

    The terahertz electroluminescence of a GaAs/AlGaAs quantum-cascade structure in the range ∼33–60cm–1 (1–1.8 THz) is studied and an energy-level diagram of the structure is calculated. The strongest transitions in this system are analyzed and their dependence on the...

  • Luminescence of nanocrystalline ZnSe:Cu. Suyver, J. F.; van der Beek, T.; Wuister, S. F.; Kelly, J. J.; Meijerink, A. // Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4222 

    A chemical synthesis is described in which ZnSe:Cu particles slowly grow to a final size of ∼ 3.5 nm radius in 4 h reaction time. During particle growth, samples are extracted to study the luminescence as a function of particle size and temperature. Quantum size effects are observed to...

  • Mechanically induced luminescence changes in molecular assemblies. Sagara, Yoshimitsu; Kato, Takashi // Nature Chemistry;Nov2009, Vol. 1 Issue 8, p605 

    Altering the shape and properties of a material through external factors such as heat, light, pressure, pH, electric or magnetic fields, or the introduction of a guest molecule, is an attractive prospect. In this Perspective, piezochromic luminescent materials — which change the colour of...

  • Thermal and electric field induced defects in InP metal-insulator-semiconductor structures. Tin, C. C.; Barnes, P. A.; Neely, W. C. // Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1940 

    The presence of deep levels in several samples of InP metal-insulator-semiconductor (MIS) structures was studied using the deep level transient spectroscopy technique. The InP MIS structures were fabricated using three different methods of oxide formation, two of which are chemical oxides and...

  • Effect of band-gap narrowing on the diffusion of charged impurities in semiconductors. Sokolovskii, B. S.; Monastyrskii, L. S. // Semiconductors;Nov97, Vol. 31 Issue 11, p1148 

    It is shown theoretically that allowance for the internal electric field due to band-gap narrowing as a result of strong doping of the semiconductor decreases the diffusion of the charged impurity and forms a descending section on its impurity density dependence.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics