TITLE

Reduced critical thickness for relaxing heteroepitaxial films on compliant substrates

AUTHOR(S)
Kästner, G.; Gösele, U.
PUB. DATE
May 2003
SOURCE
Applied Physics Letters;5/12/2003, Vol. 82 Issue 19, p3209
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It is argued that heteroepitaxial thin films (layers) grown on a compliant substrate are not able to relax their strain elastically by large-area slip across a "weak" layer. Instead, the Matthews model of plastic relaxation is modified by supposing that the interfacial misfit dislocations relax their strain field or even disappear into the weak layer. Consequently, the moving film-threading dislocations experience a reduced drag force. Therefore, the critical film thickness is lowered, in contrast to the enhanced thickness predicted by current theories. A quantitative estimate is given which depends on the nature of the weak layer. Implications include a larger free slip path and potentially a lower density of film-threading dislocations.
ACCESSION #
9697739

 

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